Light-emitting panel, light-emitting device using the light-emitting panel, and method for manufacturing the light-emitting panel

ABSTRACT

To provide a light-emitting panel in which the occurrence of crosstalk is suppressed. To provide a method for manufacturing a light-emitting panel in which the occurrence of crosstalk is suppressed. The light-emitting panel includes a first electrode of one light-emitting element, a first electrode of the other light-emitting element, and an insulating partition which separates the two first electrodes. A portion with a thickness A 1  smaller than a thickness A 0  of a portion of the layer containing a light-emitting organic compound, which overlaps with a side surface of the partition, is included. The ratio (B 1 /B 0 ) of a thickness B 1  of a portion of the second electrode, which overlaps with a side surface of the partition, to a thickness B 0  of a portion of the second electrode, which overlaps with the first electrode, is higher than the ratio (A 1 /A 0 ).

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a light-emitting panel, alight-emitting device including the light-emitting panel, and a methodfor manufacturing the light-emitting panel.

2. Description of the Related Art

Mobile phones, personal computers, smartphones, e-book readers, and thelike have come into widespread use, and the length of time we spendusing display devices in our life has thus increased. Since theseelectronic devices are now in popular use, they are also used for simplework which has conventionally been done with stationery. Specifically,schedule management, address list management, making notes, and the likewhich have conventionally been done with a notebook are now done withmultifunctional electronic devices typified by smartphones.

For most of the electronic devices, a display panel in which displayelements are arranged in matrix is used. As the display element, anelement which controls transmission of light (e.g., a liquid displayelement), an element which controls reflection of light (e.g., anelement using an electrophoretic method), a light-emitting element whichemits light by itself, or the like is used.

A light-emitting element in which a layer containing a light-emittingorganic compound (also referred to as an EL layer) which has a filmshape is provided between a pair of electrodes is known. Such alight-emitting element is called, for example, an organic EL element,and light emission can be obtained from the layer containing alight-emitting organic compound when voltage is applied between a pairof electrodes. Light-emitting devices such as a lighting device and adisplay device including an organic EL element are known. PatentDocument 1 discloses an example of a light-emitting device including anorganic EL element.

REFERENCE

-   [Patent Document 1] Japanese Published Patent Application No.    2002-324673

SUMMARY OF THE INVENTION

In this specification, one in which light-emitting elements are providedto be adjacent to each other is referred to as a light-emitting panel.In particular, a light-emitting panel in which light-emitting elementseach including a layer containing a light-emitting organic compoundbetween a pair of electrodes are provided to be adjacent to each otheris referred to as an EL panel. An EL panel is expected to be applied toa lighting device in addition to a display device.

It is difficult to manufacture a multicolor EL panel in whichlight-emitting elements which emit light of different colors arearranged with high density. For example, a method for forminglight-emitting elements which emit light of different colors in matrixusing a shadow mask (metal mask) is known; however, it is unsuitable formanufacturing a high-definition EL panel.

As another method, a method for arranging, with high density,light-emitting modules each provided with a color filter overlappingwith a light-emitting element which emits white light is known. Forexample, a plurality of first electrodes are formed in matrix with highdensity by a photolithography method, a layer emitting white light isprovided between the first electrodes and a second electrode overlappingwith the first electrodes, and high definition light-emitting elementswhich emit white light are arranged in matrix. Next, there is a methodfor manufacturing a light-emitting panel in which color filtersexhibiting transmission of different emission colors such as red, green,and blue, are provided adjacent to each other in each of thelight-emitting elements, and a plurality of light-emitting modules whichemit light of different colors are provided.

However, in a light-emitting panel provided with adjacent light-emittingelements in each of which a layer containing a light-emitting organiccompound is sandwiched between a first electrode and a second electrode,a phenomenon in which electric power applied to one light-emittingelement is distributed to an adjacent light-emitting element and theadjacent light-emitting element emits light unintentionally (so-calledcrosstalk) occurs in some cases. A display device to which alight-emitting panel in which such crosstalk occurs is applied cannotdisplay a high definition image. In addition, in a multicolorlight-emitting panel, light of a desired color cannot be obtained.

Note that a structure in which an insulating partition having aninversed tapered cross-sectional shape is provided between a pluralityof adjacent light-emitting elements to separate a layer containing alight-emitting organic compound and each of a first electrode and asecond electrode is employed for, for example, a passive matrixlight-emitting panel. In two pixels between which the partition isprovided, the occurrence of crosstalk can be prevented. However, whenthe partition having an inversed tapered cross-sectional shape isprovided to surround the light-emitting element, a second electrode iselectrically insulated from an adjacent second electrode and thus cannotbe supplied with electric power. That is why arrangement of thepartition having an inversed tapered cross-sectional shape is limited toarrangement in which second electrodes of adjacent light-emittingelements are continuously provided at least in one direction. As aresult, crosstalk occurs in a pixel direction in which second electrodesare continuously provided in some cases.

One embodiment of the present invention is made in view of the foregoingtechnical background. Therefore, it is an object of one embodiment ofthe present invention to provide a light-emitting panel in which theoccurrence of crosstalk is suppressed. It is another object of oneembodiment of the present invention to provide a method formanufacturing a light-emitting panel in which the occurrence ofcrosstalk is suppressed.

In order to achieve any of the above objects, one embodiment of thepresent invention focuses on a structure of a light-emitting panel inwhich light-emitting elements in each of which a layer containing alight-emitting organic compound is sandwiched between a first electrodeand a second electrode are provided to be adjacent to each other, and inwhich the layer containing a light-emitting organic compound issandwiched between the second electrode and an insulating partitionwhich separates a first electrode of one light-emitting element and afirst electrode of the other light-emitting element. Further, oneembodiment of the present invention focuses on current flowing betweenthe first electrode of the one light-emitting element and a portion ofthe second electrode comprised in the other light-emitting elementthrough the layer containing a light-emitting organic compound.

Any of the objects is solved according to one embodiment of the presentinvention which is a structure in which the layer containing alight-emitting organic compound includes a portion with a thickness A₁smaller than a thickness A₀ of a portion in contact with the firstelectrode, in a portion overlapping with a side surface of theinsulating partition, and the ratio (B₁/B₀) of a thickness B₁ of aportion of the second electrode which overlaps with the side surface ofthe partition, to a thickness B₀ of a portion of the second electrode,which overlaps with the first electrode, is higher than the ratio(A₁/A₀). Preferably, the thickness A₁ is smaller than ½ of the thicknessA₀ of the portion in contact with the first electrode.

In other words, one embodiment of the present invention is alight-emitting panel in which one light-emitting element and the otherlight-emitting element are provided to be adjacent to each other over asubstrate. The light-emitting panel includes a first electrode of theone light-emitting element, a first electrode of the otherlight-emitting element, a partition separating the two first electrodes,a second electrode overlapping with the two first electrodes and thepartition, and a layer containing a light-emitting organic compoundwhich is in contact with the two first electrodes and the partition andwhich is sandwiched between the second electrodes. Further, in thelight-emitting panel, the layer containing a light-emitting organiccompound includes a portion with a thickness A₁ smaller than ½ of athickness A₀ of a portion overlapping with the first electrode, in theportion overlapping with a side surface of the partition, and the ratio(B₁/B₀) of a thickness B₁ of a portion of the second electrode whichoverlaps with the side surface of the partition to a thickness B₀ of aportion of the second electrode, which overlaps with the first electrodeis higher than the ratio (A₁/A₀).

The above light-emitting panel according to one embodiment of thepresent invention includes the first electrode of the one light-emittingelement, the first electrode of the other light-emitting element, andthe insulating partition which separates the two first electrodes. Inthe light-emitting panel, the layer containing a light-emitting organiccompound includes a portion with a thickness A₁ smaller than ½ of athickness A₀ of a portion overlapping with the first electrode, in theportion overlapping with a side surface of the partition, and the ratio(B₁/B₀) of the thickness B₁ of the portion of the second electrode,which overlaps with the side surface of the partition, to the thicknessB₀ of the portion of the second electrode, which overlaps with the firstelectrode, is higher than the ratio (A₁/A₀). Note that in thisspecification, a thickness of a portion of a layer, which overlaps witha side surface of a partition, means a thickness of the portion of thelayer in the vertical direction with respect to the side surface of thepartition.

Thus, the thickness of the layer containing a light-emitting organiccompound which overlaps with the partition provided between the onelight-emitting element and the other light-emitting element is reduced,which can lead to an increase in electrical resistance. Therefore,current flowing through the layer containing a light-emitting organiccompound provided between the one light-emitting element and the otherlight-emitting element can be suppressed. In particular, when thethickness of the portion of the layer containing a light-emittingorganic compound, which overlaps with a side surface of the partition,is smaller than ½ of the thickness of the portion of the layercontaining a light-emitting organic compound, which is in contact withthe first electrode, the effect of suppressing current is enhanced;thus, a light-emitting panel in which the occurrence of crosstalk issuppressed can be provided.

According to one embodiment of the present invention, in the abovelight-emitting panel, a side surface of the insulating partition has anangle of greater than or equal to 55° and less than or equal to 100°with respect to the substrate.

In the above light-emitting panel according to one embodiment of thepresent invention, the thickness of the portion of the layer containinga light-emitting organic compound, which overlaps with a side surface ofthe partition, can be smaller than ½ of the thickness A₀ of the portionof the layer containing a light-emitting organic compound, which is incontact with the first electrode. Thus, a region with suppressedconductivity is formed in the portion of the layer containing alight-emitting organic compound, which overlaps with the side surface ofthe partition, whereby current flowing through the layer containing alight-emitting organic compound provided between the one light-emittingelement and the other light-emitting element can be suppressed. As aresult, a light-emitting panel in which the occurrence of crosstalk issuppressed can be provided.

One embodiment of the present invention is a light-emitting panel inwhich a thickness of a portion of a second electrode which overlaps witha side surface of a partition, is larger than a thickness of a portionof the second electrode, which overlaps with the first electrode.

In the above light-emitting panel according to one embodiment of thepresent invention, the thickness of the portion of the second electrode,which overlaps with the partition, is large. Thus, a region withincreased conductivity is formed in the portion of the second electrode,which overlaps with the partition, and an effect of increasing theconductivity of the planar second electrode, an effect of a so-calledauxiliary wiring, can be obtained. As a result, a light-emitting panelcan be provided in which the occurrence of a phenomenon where currentflows unevenly is prevented by suppression of a decrease in voltage dueto electrical resistance of the second electrode, so that light can beemitted uniformly.

According to one embodiment of the present invention, the abovelight-emitting panel includes a layer containing a light-emittingorganic compound including a charge generation region containing asubstance having a high hole-transport property and an acceptorsubstance with respect to the substance having a high hole-transportproperty, and a light-emitting unit. The charge generation region isprovided between the light-emitting unit and the first electrode.

The above light-emitting panel according to one embodiment of thepresent invention is provided with the charge generation regioncontaining a substance having a high hole-transport property and anacceptor substance with respect to the substance having a highhole-transport property. In addition, the thickness of a portion of thecharge generation region, which overlaps with a side surface of thepartition, is small. Thus, the conductivity is suppressed, wherebycurrent flowing between the first electrode of the one light-emittingelement and the light-emitting unit of the other light-emitting elementthrough the charge generation region can be suppressed. As a result, alight-emitting panel in which the occurrence of crosstalk is suppressedcan be provided.

According to one embodiment of the present invention, the abovelight-emitting panel includes a layer containing a light-emittingorganic compound including an electron-injection buffer containing asubstance having a high electron-transport property and a donorsubstance with respect to the substance having a high electron-transportproperty, and a light-emitting unit. The electron-injection buffer isprovided between the light-emitting unit and the first electrode.

The above light-emitting panel according to one embodiment of thepresent invention includes the electron-injection buffer containing asubstance having a high electron-transport property and a donorsubstance with respect to the substance having a high electron-transportproperty. The thickness of a portion of the electron-injection buffer,which overlaps with a side surface of the partition, is small. Thus, theconductivity is suppressed, whereby current flowing between the firstelectrode of the one light-emitting element and the light-emitting unitof the other light-emitting element through the electron-injectionbuffer can be suppressed. As a result, a light-emitting panel in whichthe occurrence of crosstalk is suppressed can be provided.

According to one embodiment of the present invention, the abovelight-emitting panel includes a layer containing a light-emittingorganic compound provided with a plurality of light-emitting units andintermediate layers sandwiched between the light-emitting units. Each ofthe intermediate layers includes an electron-injection buffer containinga substance having a high electron-transport property and a donorsubstance with respect to the substance having a high electron-transportproperty.

The above light-emitting panel according to one embodiment of thepresent invention includes the intermediate layers sandwiched betweenthe light-emitting units, and the intermediate layers are each providedwith an electron-injection buffer containing a substance having a highelectron-transport property and a donor substance with respect to thesubstance having a high electron-transport property. Thus, the thicknessof the portion of the electron-injection buffer provided in oneintermediate layer, which overlaps with a side surface of the partition,is small and the conductivity is suppressed, whereby current flowingbetween the first electrode of the one light-emitting element and thelight-emitting unit of the other light-emitting element through theelectron-injection buffer provided in the intermediate layer can besuppressed. As a result, a light-emitting panel in which the occurrenceof crosstalk is suppressed can be provided.

One embodiment of the present invention is a light-emitting deviceincluding the above-described light-emitting panel.

The above light-emitting device according to one embodiment of thepresent invention includes a first electrode of one light-emittingelement, a first electrode of the other light-emitting element, apartition which separates the two first electrodes, and a layercontaining a light-emitting organic compound which is in contact withthe two first electrodes and the partition and which is sandwichedbetween the two first electrodes and a second electrode. In addition, alight-emitting panel is provided in which a thickness A₁ of a portion ofa layer containing a light-emitting organic compound, which overlapswith a side surface of the partition, is smaller than ½ of a thicknessA₀ of a portion of the layer containing a light-emitting organiccompound, which is in contact with the first electrode, the ratio(B₁/B₀) of a thickness B₁ of a portion of the second electrode, whichoverlaps with a side surface of the partition, to a thickness B₀ of aportion of the second electrode, which overlaps with the firstelectrode, is higher than the ratio (A₁/A₀), and crosstalk issuppressed. As a result, a light-emitting device can be provided inwhich the occurrence of crosstalk is suppressed.

One embodiment of the present invention is a method for manufacturing alight-emitting panel including a first step of forming two firstelectrodes which are adjacent to each other over a substrate and aninsulating partition which separates the two first electrodes and whosea side surface forms an angle of greater than or equal to 55° and lessthan or equal to 100° with respect to the substrate, a second step offorming a layer containing a light-emitting organic compound so that aportion with a thickness A₁ smaller than ½ of a thickness A₀ of aportion which overlaps with the first electrode is provided in a portionoverlapping with a side surface of the partition by a deposition methodhaving directivity in a vertical direction to the substrate, and a thirdstep of forming a second electrode by a deposition method by which alayer is deposited on the side surface of the partition so that theratio (B₁/B₀) of a thickness B₁ of a portion of the second electrodewhich overlaps with the side surface of the partition, to a thickness B₀of a portion of the second electrode which overlaps with the firstelectrode, is higher than the ratio (A₁/A₀).

According to the above method for manufacturing a light-emitting panelaccording to one embodiment of the present invention, the two firstelectrodes and the insulating partition which separates the two firstelectrodes can be formed. The portion with the thickness A₁ smaller than½ of the thickness A₀ of the portion, which overlaps with the firstelectrode, can be formed in the portion of the layer containing alight-emitting organic compound, which overlaps with a side surface ofthe partition. The ratio (B₁/B₀) of the thickness B₁ of the portion ofthe second electrode which overlaps with the side surface of thepartition, to the thickness B₀ of the portion of the second electrodewhich overlaps with the first electrode, can be higher than the ratio(A₁/A₀).

Thus, the thickness of the layer containing a light-emitting organiccompound which overlaps with the partition provided between the onelight-emitting element and the other light-emitting element isdecreased, which can lead to suppression of current flowing through thelayer containing a light-emitting organic compound provided between theone light-emitting element and the other light-emitting element. As aresult, a method for manufacturing a light-emitting panel in which theoccurrence of crosstalk is suppressed can be provided.

Note that in this specification, an “EL layer” refers to a layerprovided between a pair of electrodes in a light-emitting element. Thus,a light-emitting layer containing an organic compound that is alight-emitting substance which is interposed between electrodes is anembodiment of the EL layer.

In this specification, in a layer containing a light-emitting organiccompound provided between a pair of electrodes, a layer or a stack bodyincluding one region where electrons and holes are recombined isreferred to as a light-emitting unit.

In this specification, a layer which includes at least a chargegeneration region, injects holes into an adjacent layer on the cathodeside, and injects electrons into an adjacent layer on the anode side isreferred to as an intermediate layer. For example, in the case where alayer containing a light-emitting organic compound includes a pluralityof light-emitting units, an intermediate layer is provided betweenlight-emitting units.

In this specification, in the case where a substance A is dispersed inmatrix formed using a substance B, the substance B forming the matrix isreferred to as a host material, and the substance A dispersed in thematrix is referred to as a guest material. Note that the substance A andthe substance B may each be a single substance or a mixture of two ormore kinds of substances.

Note that a light-emitting device in this specification means an imagedisplay device, a light-emitting device, or a light source (including alighting device). In addition, the light-emitting device includes any ofthe following modules in its category: a module in which a connectorsuch as an FPC (flexible printed circuit), a TAB (tape automatedbonding) tape, or a TCP (tape carrier package) is attached to alight-emitting device; a module having a TAB tape or a TCP provided witha printed wiring board at the end thereof; and a module having an IC(integrated circuit) directly mounted over a substrate over which alight-emitting element is formed by a COG (chip on glass) method.

According to one embodiment of the present invention, a light-emittingpanel in which the occurrence of crosstalk is suppressed can beprovided. Alternatively, a method for manufacturing a light-emittingpanel in which the occurrence of crosstalk is suppressed can beprovided.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B illustrate a structure of a light-emitting panelaccording to one embodiment.

FIGS. 2A to 2C each illustrate a structure of a light-emitting panelaccording to one embodiment.

FIGS. 3A to 3C illustrate a method for manufacturing a light-emittingpanel according to one embodiment.

FIGS. 4A to 4C illustrate a method for manufacturing a light-emittingpanel according to one embodiment.

FIGS. 5A to 5E each illustrate a structure of a light-emitting elementaccording to one embodiment.

FIGS. 6A and 6B illustrate a structure of a light-emitting deviceaccording to one embodiment.

FIGS. 7A to 7E each illustrate a structure of a light-emitting deviceaccording to one embodiment.

FIGS. 8A to 8C illustrate a structure of a light-emitting panelaccording to one example.

FIGS. 9A and 9B illustrate a light-emitting state of a light-emittingpanel according to one example and a light-emitting state of acomparative panel of a comparative example.

FIG. 10 illustrates a light-emitting state of a light-emitting panelaccording to one example and a light-emitting state of a comparativepanel of a comparative example.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments will be described with reference to the drawings. Note thatthe present invention is not limited to the following description and itwill be readily appreciated by those skilled in the art that modes anddetails can be modified in various ways without departing from thespirit and the scope of the present invention. Therefore, the inventionshould not be construed as being limited to the description in thefollowing embodiments. Note that in structures of the present inventiondescribed hereinafter, the same portions or portions having similarfunctions are denoted by the same reference numerals in differentdrawings, and description thereof is not repeated.

Embodiment 1

In this embodiment, a light-emitting panel having a structure in which athickness A₁ of a portion of a layer containing a light-emitting organiccompound, which overlaps with a side surface of a partition, is smallerthan ½ of a thickness A₀ of a portion of the layer containing alight-emitting organic compound, which is in contact with a firstelectrode, and the ratio (B₁/B₀) of a thickness B₁ of a portion of asecond electrode, which overlaps with the side surface of the partition,to a thickness B₀ of a portion of the second electrode, which overlapswith the first electrode, is higher than the ratio (A₁/A₀) will bedescribed with reference to FIGS. 1A and 1B and FIGS. 2A to 2C.Specifically, an EL panel which can be applied to a display device willbe described.

FIGS. 1A and 1B illustrate a structure of an EL panel according to oneembodiment of the present invention. FIG. 1A is a top view of an ELpanel 190 according to one embodiment of the present invention, and FIG.1B is a cross-sectional view taken along line J-K in FIG. 1A.

The EL panel 190 in FIG. 1A includes a partition 140 between onelight-emitting element 150 a and the other light-emitting element 150 b.As illustrated in FIG. 1B, the EL panel 190 includes the onelight-emitting element 150 a and the other light-emitting element 150 bover an insulating layer 107 provided over a substrate 100. In addition,the EL panel 190 includes a layer 153 containing a light-emittingorganic compound interposed between a second electrode on one side, anda first electrode 151 a of the one light-emitting element 150 a and afirst electrode 151 b of the other light-emitting element 150 b on theother side.

The one light-emitting element 150 a includes a first electrode 151 a, aportion 152 a of a second electrode, and a portion 153 a of a layercontaining a light-emitting organic compound, and the otherlight-emitting element 150 b includes a first electrode 151 b, a portion152 b of the second electrode, and a portion 153 b of the layercontaining the light-emitting organic compound.

Each of the first electrodes 151 a and 151 b is an island-shapedconductive layer formed over the insulating layer 107 and iselectrically connected to an electrode 106 a or an electrode 106 b whichis provided between the substrate 100 and the insulating layer 107. Notethat a structure of a light-emitting element which can be applied to theone light-emitting element 150 a or the other light-emitting element 150b will be described in detail in Embodiment 3.

The partition 140 covers an end portion of the first electrode 151 a andan end portion of the first electrode 151 b and includes an openingportion overlapping with the first electrode 151 a and an openingportion overlapping with the first electrode 151 b. The side surface ofthe partition 140 has an angle θ with respect to the substrate 100. Inaddition, an end portion of the partition 140 is preferably formed so asto be in contact with the first electrode 151 a at an angle smaller thanthe angle θ to prevent a short circuit between the first electrode 151 aand the second electrode 152 a at the end portion of the partition 140.

The partition 140 has an insulating property and is formed using anorganic insulating material or an inorganic insulating material. Inparticular, a photosensitive resin material is preferably used becausean angle of a side surface of an opening portion formed over the firstelectrode is easily controlled.

A portion 153 c of the layer containing a light-emitting organiccompound is formed over a side surface of the partition 140, and aportion 152 of the second electrode is formed over the layer 153 ccontaining a light-emitting organic compound.

The portion 152 c of the second electrode formed over the partition 140electrically connects the portion 152 a of second electrode of the onelight-emitting element 150 a to the portion 152 b of the secondelectrode of the other light-emitting element 150 b.

The thickness of the portion 153 c of the layer containing alight-emitting organic compound which is formed over the side surface ofthe partition 140 is smaller than in other portions; therefore,electrical resistance of the layer containing a light-emitting organiccompound is higher on the side surface of the partition 140 than inother regions. Since a region with high electrical resistance is formedalong the side surface of the partition 140, current flowing between theone light-emitting element and the other light-emitting element throughthe layer 153 c containing a light-emitting organic compound can besuppressed. As a result, a light-emitting panel in which the occurrenceof crosstalk is suppressed can be provided.

FIGS. 2A to 2C illustrate modes of partitions whose side surfaces havedifferent angles according to embodiments of the present invention. Thepartitions whose side surfaces have different angles are describedbelow.

<Mode 1 of Partition>

FIG. 2A illustrates a mode of a partition according to one embodiment ofthe present invention. A partition 140 a illustrated in FIG. 2A coversan end portion of the first electrode 151 a of the one light-emittingelement 150 a and an end portion of the first electrode 151 b of theother light-emitting element 150 b and includes an opening portionoverlapping with the first electrode 151 a and an opening portionoverlapping with the first electrode 151 b. The side surface of thepartition 140 a forms an angle θ_(a) comprised between 55° and 100° withthe substrate 100, and θ_(a) is approximately 65° in this mode of apartition.

The thickness A₁ of a portion of a layer 153 containing a light-emittingorganic compound, which overlaps with the side surface of the partition140 a, is smaller than ½ of the thickness A₀ of the layer 153 containinga light-emitting organic compound, which is in contact with the firstelectrode 151 a.

The ratio (B₁/B₀) of the thickness B₁ of a portion of the secondelectrode 152, which overlaps with the side surface of the partition 140a, to the thickness B₀ of a portion of the second electrode 152, whichoverlaps with the first electrode 151 a, is higher than the ratio(A₁/A₀), and a portion of the second electrode of the one light-emittingelement 150 a and a portion of the second electrode of the otherlight-emitting element 150 b are electrically connected to each otherthrough a portion of the second electrode formed over the side surfaceof the partition 140 a.

With the above structure, the thickness of the portion of the layer 153containing a light-emitting organic compound, which overlaps with theside surface of the partition 140 a provided between the onelight-emitting element 150 a and the other light-emitting element 150 b,is reduced, which can lead to an increase in electrical resistance.Therefore, current flowing through the layer 153 containing alight-emitting organic compound provided between the one light-emittingelement 150 a and the other light-emitting element 150 b can besuppressed. As a result, a light-emitting panel in which the occurrenceof crosstalk is suppressed can be provided. In addition, the planarsecond electrode 152 electrically connects the one light-emittingelement 150 a to the other light-emitting element 150 b; therefore, eachlight-emitting element can be operated by application of voltage to thefirst electrode.

<Mode 2 of Partition>

FIG. 2B illustrates a mode of a partition according to one embodiment ofthe present invention. A partition 140 b illustrated in FIG. 2B coversan end portion of the first electrode 151 a of the one light-emittingelement 150 a and an end portion of the first electrode 151 b of theother light-emitting element 150 b and includes an opening portionoverlapping with the first electrode 151 a and an opening portionoverlapping with the first electrode 151 b. A side surface of thepartition 140 b forms an angle θ_(b) comprised between 55° and 100° withthe substrate 100, and θ_(b) is approximately 90° in this mode of apartition.

Since a layer containing a light-emitting organic compound is not formedon the side surface of the partition 140 b, the layer 153 a containing alight-emitting organic compound of the one light-emitting element 150 aand the layer 153 b containing a light-emitting organic compound of theother light-emitting element 150 b are separated from each other by thepartition 140 b.

Further, the second electrode 152 is formed in a portion which overlapswith the side surface of the partition 140 b, and a portion of thesecond electrode of the one light-emitting element 150 a and a portionof the second electrode of the other light-emitting element 150 b areelectrically connected to each other through a portion of the secondelectrode formed over the side surface of the partition 140 b.

Thus, current flowing between the one light-emitting element 150 a andthe other light-emitting element 150 b can be suppressed. As a result, alight-emitting panel in which the occurrence of crosstalk is suppressedcan be provided. In addition, the planar second electrode 152electrically connects the one light-emitting element 150 a to the otherlight-emitting element 150 b; therefore, each light-emitting element canbe operated by application of voltage to the first electrode.

<Mode 3 of Partition>

FIG. 2C illustrates a mode of a partition according to one embodiment ofthe present invention. A partition 140 c illustrated in FIG. 2C coversan end portion of the first electrode 151 a of the one light-emittingelement 150 a and an end portion of the first electrode 151 b of theother light-emitting element 150 b and includes an opening portionoverlapping with the first electrode 151 a and an opening portionoverlapping with the first electrode 151 b. A side surface of thepartition 140 c forms an angle θ_(c) comprised between 55° and 100° withthe substrate 100, and θ_(c) approximately 100° in this mode of apartition. Note that as illustrated in FIG. 2C, a portion narrower thanthe widths of an top portion and a bottom portion of the partition 140 cis provided between the top portion and the bottom portion of thepartition 140 c, so that a short circuit between the first electrode andthe second electrode can be prevented.

Since a layer containing a light-emitting organic compound is not formedon the side surface of the partition 140 c, the layer 153 a containing alight-emitting organic compound of the one light-emitting element 150 aand the layer 153 b containing a light-emitting organic compound of theother light-emitting element 150 b are apart from each other by thepartition 140 c.

Further, the second electrode 152 is formed in a portion which overlapswith the side surface of the partition 140 c, and a portion of thesecond electrode of the one light-emitting element 150 a and a portionof the second electrode of the other light-emitting element 150 b areelectrically connected to each other through a portion of the secondelectrode formed over the side surface of the partition 140 c.

Thus, current flowing between the one light-emitting element 150 a andthe other light-emitting element 150 b can be suppressed. As a result, alight-emitting panel in which the occurrence of crosstalk is suppressedcan be provided. In addition, the planar second electrode 152electrically connects the one light-emitting element 150 a to the otherlight-emitting element 150 b; therefore, each light-emitting element canbe operated by application of voltage to the first electrode.

The above light-emitting panel according to one embodiment of thepresent invention includes the first electrode of the one light-emittingelement, the first electrode of the other light-emitting element, and aninsulating partition which separates the two first electrodes. Thethickness A₁ of the portion of the layer containing a light-emittingorganic compound which overlaps with the side surface of the partition,is smaller than ½ of the thickness A₀ of the portion of the layercontaining a light-emitting organic compound which is in contact withthe first electrode, and the ratio (B₁/B₀) of the thickness B₁ of theportion of the second electrode, which overlaps with the side surface ofthe partition, to the thickness B₀ of the portion of the secondelectrode, which overlaps with the first electrode, is higher than theratio (A₁/A₀).

Thus, the thickness of the portion of the layer containing alight-emitting organic compound, which overlaps with the side surface ofthe partition provided between the one light-emitting element and theother light-emitting element, is reduced, which can lead to an increasein electrical resistance. Therefore, current flowing through the layercontaining a light-emitting organic compound provided between the onelight-emitting element and the other light-emitting element can besuppressed. In particular, when the thickness of the portion of thelayer containing a light-emitting organic compound, which overlaps withthe side surface of the partition, is smaller than ½ of the thickness ofthe portion of the layer containing a light-emitting organic compound,which is in contact with the first electrode, the effect of suppressingcurrent is enhanced; thus, a light-emitting panel in which theoccurrence of crosstalk is suppressed can be provided.

Note that a light-emitting panel in which light-emitting elements areprovided at short intervals has a high aperture ratio and drivingvoltage can be reduced as compared to a light-emitting panel with a lowaperture ratio; therefore, power consumption can be reduced. When thelight-emitting panel in which the light-emitting elements are providedat short intervals is used for a display device, an image with highdefinition can be displayed. However, when the distance between onelight-emitting element and the other light-emitting element is short,crosstalk easily occurs. In other words, as a light-emitting panel has ahigher aperture ratio or higher definition, crosstalk occurs easily.Specifically, in the case where distance between adjacent light-emittingelements is less than or equal to 7 μm, crosstalk easily occurs. In thecase of greater than or equal to 350 pixels per inch (i.e., thehorizontal resolution is greater than or equal to 350 pixels per inch(ppi)), crosstalk easily occurs; in particular, in the case of greaterthan or equal to 400 ppi, crosstalk frequently occurs.

A light-emitting panel according to one embodiment of the presentinvention can suppress the occurrence of crosstalk even in the case of alight-emitting panel with a high aperture ratio or high definition. Thisembodiment can be combined with any of the other embodiments in thisspecification as appropriate.

Embodiment 2

In this embodiment, a method for manufacturing a light-emitting panelhaving a structure in which the thickness A₁ of a portion of a layercontaining a light-emitting organic compound which overlaps with a sidesurface of a partition, is smaller than ½ of the thickness A₀ of aportion of the layer containing a light-emitting organic compound, whichis in contact with a first electrode, and the ratio (B₁/B₀) of thethickness B₁ of a portion of a second electrode, which overlaps with theside surface of the partition, to the thickness B₀ of a portion of thesecond electrode, which overlaps with the first electrode, is higherthan the ratio (A₁/A₀) will be described with reference to FIGS. 3A to3C.

<First Step>

A wiring layer including the electrode 106 a is formed over aninsulating surface of the substrate 100, and the insulating layer 107 isformed over the wiring layer including the electrode 106 a. Next, anopening portion which reaches the electrode 106 a is formed in theinsulating layer 107, and a conductive film serving as a first electrodeis formed so as to be electrically connected to the electrode 106 a.Then, the conductive film is processed into island shapes, so that thefirst electrode 151 a and the first electrode 151 b are formed.

Next, the insulating partition 140 a is formed. The partition 140 acovers an end portion of the first electrode 151 a and an end portion ofthe first electrode 151 b and is formed to include an opening portionoverlapping with the first electrode 151 a and an opening portionoverlapping with the first electrode 151 b. The partition 140 a isformed so that a side surface thereof has an angle θ of 55° to 100° withrespect to the substrate 100.

The angle θ of the side surface of the partition 140 a is adjusted, forexample, by using a positive photoresist and adjusting as appropriatelight exposure conditions of the positive photoresist. In this way, theangle θ of the side surface is adjusted in the range of 55° to 90°, anda partition can be formed.

Alternatively, a negative photoresist can be used and a mask gap isadjusted as appropriate, so that a partition can be formed by adjustingthe angle θ of the side surface in the range of 90° to 100°.

Note that the method for adjusting the angle θ of the side surface ofthe insulating partition 140 a is not limited thereto; a known method,e.g., an etching method or an ashing method, or a combination of knownmethods can be employed (see FIG. 3A).

<Second Step>

Next, the layer 153 containing a light-emitting organic compound isformed in contact with the first electrode 151 a of the onelight-emitting element 150 a, the first electrode 151 b of the otherlight-emitting element 150 b, and an upper portion of the insulatingpartition 140 a. Here, the layer 153 containing a light-emitting organiccompound is formed by a deposition method 191 having directivity in adirection vertical to the two first electrodes. By the deposition method191 having directivity in the direction vertical to the firstelectrodes, the layer can be preferentially formed over surfaces of thefirst electrodes compared to side surfaces of the partition.

As a deposition method having directivity in a direction vertical to afirst electrode, a deposition method in which the speed of deposition ofa layer over a plane vertical to a surface of the first electrode islower than or equal to 1/10 of the speed of deposition of a layer over asurface of the first electrode is preferable. As an example of thedeposition method 191 having directivity in the direction vertical tothe first electrodes, a resistance heating method can be given.

Note that the side surface of the insulating partition 140 a has anangle θ of greater than or equal to 55° and less than or equal to 100°with respect to the substrate 100; therefore, when the layer 153containing a light-emitting organic compound is formed by the depositionmethod 191 having directivity in the direction vertical to the firstelectrodes 151 a, the thickness A₁ of the portion of the layer 153containing a light-emitting organic compound, which overlaps with theside surface of the partition 140 a, is smaller than ½ of the thicknessA₀ of the portion of the layer 153 containing a light-emitting organiccompound, which is in contact with the first electrode 151 a (see FIG.3B).

Thus, the thickness of the portion of the layer 153 containing alight-emitting organic compound, which overlaps with the side surface ofthe partition 140 a provided between the one light-emitting element 150a and the other light-emitting element 150 b, is reduced, which can leadto an increase in electrical resistance; therefore, current flowingthrough the layer 153 containing a light-emitting organic compoundprovided between the one light-emitting element 150 a and the otherlight-emitting element 150 b can be suppressed. Thus, a light-emittingpanel in which the occurrence of crosstalk is suppressed can beprovided.

<Third Step>

Next, the second electrode 152 is formed. The second electrode 152 isformed so as to overlap with the first electrode 151 a, the firstelectrode 151 b, and the insulating partition 140 a and to be in contactwith the layer 153 containing a light-emitting organic compound. Notethat the second electrode 152 is formed by a deposition method 192 bywhich a layer is deposited not only over the layer 153 containing alight-emitting organic compound and but is also deposited at high enoughspeed over the side surface of the insulating partition 140 a. By thedeposition method 192 by which a layer is deposited also over the sidesurface of the insulating partition 140 a, the second electrode 152 isformed also over the side surface of the partition 140 a, and the secondelectrode of the one light-emitting element 150 a and the secondelectrode of the other light-emitting element 150 b can be electricallyconnected to each other.

As the deposition method 192 by which a layer is deposited also over theside surface of the insulating partition 140 a, a deposition method inwhich the speed of deposition of a layer over a plane vertical to thesubstrate over which the first electrode is formed is higher than orequal to ½ and lower than or equal to 1 of the speed of deposition of alayer over a surface parallel to the substrate is preferable. When theratio of the deposition speed is smaller than ½, it is difficult toincrease the thickness of the portion of the second electrode thatoverlaps with the side surface of the partition. When the ratio of thedeposition speed is larger than 1, the deposition speed of the portionof the second electrode that overlaps with the first electrodes, becomeslow. As an example of the deposition method 192 by which a layer isdeposited also over the side surface of the partition 140 a, asputtering method can be given (see FIG. 3C).

Note that when the second electrode 152 is formed by the depositionmethod 192 by which a layer is deposited also over the side surface ofthe insulating partition 140 a, the ratio (B₁/B₀) of the thickness B₁ ofthe portion of the second electrode, which overlaps with the sidesurface of the partition 140 a, to the thickness B₀ of the portion ofthe second electrode, which overlaps with the first electrode, can behigher than the ratio (A₁/A₀). Thus, the second electrode of the onelight-emitting element 150 a and the second electrode of the otherlight-emitting element 150 b are electrically connected to each otherwhile electrical resistance is increased by a reduction in the thicknessof the portion of the layer 153 containing a light-emitting organiccompound, which overlaps with the side surface of the partition 140 a.

<Alternative Example of Method for Manufacturing Light-Emitting Panel>

Next, an alternative example of a method for manufacturing alight-emitting panel according to one embodiment of the presentinvention will be described with reference to FIGS. 4A to 4C.

Through the above first step, the insulating partition 140 a is formedso that the side surface thereof has an angle θ of greater than or equalto 55° and less than or equal to 100° with respect to the substrate 100.

Next, through the above second step, the layer 153 containing alight-emitting organic compound is formed. Thus, the thickness of theportion of the layer 153 containing a light-emitting organic compound,which overlaps with the side surface of the partition 140 a providedbetween the one light-emitting element 150 a and the otherlight-emitting element 150 b, can be reduced and electrical resistancecan be increased, whereby current flowing through the layer 153containing a light-emitting organic compound provided between the onelight-emitting element 150 a and the other light-emitting element 150 bcan be suppressed. As a result, a light-emitting panel in which theoccurrence of crosstalk is suppressed can be provided.

In this modification example, the second electrode 152 is deposited by adeposition method 193 having directivity in a direction vertical to theside surface of the insulating partition 140 a in the third step.

For example, when the second electrode with the thickness B₁ isdeposited over one of the side surfaces of the partition which has anangle θ of 60° with respect to the substrate, the thickness B₀ of thesecond electrode over the first electrode is B₁×cos 60°, i.e., about ½of B₁ (see FIG. 4C). As described above, when a layer is deposited overthe side surface of the partition by the deposition method havingdirectivity, preferential deposition of the layer over the side surfaceof the partition can be performed.

In this alternative example, deposition is performed on one (the leftside) of the side surfaces of the partition 140 a by the depositionmethod 193 having directivity (see FIG. 4A). Subsequently, deposition isperformed on the other (the right side) of the side surfaces of thepartition 140 a by a deposition method 194 having directivity (see FIG.4B). Note that a dotted line in the second electrode 152 indicates aportion formed by the deposition method 193. By this method, the secondelectrode 152 can be deposited over both of the side surfaces of thepartition 140 a in preference to deposition over the first electrode.

When deposition is performed on both of the side surfaces of thepartition in a condition that the side surface has an angle θ of 60°with respect to the substrate, the thickness B₀ of the second electrode152 over the first electrode 151 a or the first electrode 151 b issubstantially the same as the thickness B₁ of a portion of the secondelectrode 152, which overlaps with the side surface.

Then, the insulating partition 140 a is formed so that the side surfacehas an angle θ of greater than 60° and less than approximately 90° withrespect to the substrate 100 and deposition is performed by a depositionmethod having directivity in the direction vertical to the side surface,so that the portion of the second electrode, which overlaps with theside surface of the partition 140 a, can be thicker than the portion ofthe second electrode, which overlaps with the first electrode.

In the light-emitting panel according to one embodiment of the presentinvention, the thickness of the portion of the second electrode, whichoverlaps with the side surface of the partition, is large. Thus, aregion with increased conductivity is formed in the portion of thesecond electrode, which overlaps with the side surface of the partition,and an effect of increasing the conductivity of the planar secondelectrode, an effect of a so-called auxiliary wiring, can be obtained.As a result, a light-emitting panel can be provided in which theoccurrence of a phenomenon where current flows unevenly is prevented bysuppression of a decrease in voltage due to electrical resistance of thesecond electrode, so that light can be emitted uniformly.

By the above method for manufacturing a light-emitting panel, which isone embodiment of the present invention, the first electrode of the onelight-emitting element, the first electrode of the other light-emittingelement, and the insulating partition which separates the two firstelectrodes can be formed. The thickness A₁ of the portion of the layercontaining a light-emitting organic compound, which overlaps with a sidesurface of the partition, can be smaller than ½ of the thickness A₀ ofthe layer containing a light-emitting organic compound, which is incontact with the first electrode. Further, the ratio (B₁/B₀) of thethickness B₁ of the portion of the second electrode, which overlaps withthe side surface of the partition, to the thickness B₀ of the portion ofthe second electrode, which overlaps with the first electrode, can behigher than the ratio (A₁/A₀).

Thus, the thickness of the portion of the layer containing alight-emitting organic compound, which overlaps with the side surface ofthe partition provided between the one light-emitting element and theother light-emitting element, is reduced, which can lead to an increasein electrical resistance. Therefore, current flowing through the layercontaining a light-emitting organic compound provided between the onelight-emitting element and the other light-emitting element can besuppressed. In particular, when the thickness of the portion of thelayer containing a light-emitting organic compound, which overlaps withthe side surface of the partition, is smaller than ½ of the thickness ofthe portion of the layer containing a light-emitting organic compound,which is in contact with the first electrode, the effect of suppressingcurrent is enhanced; thus, a light-emitting panel in which theoccurrence of crosstalk is suppressed can be provided.

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Embodiment 3

For a light-emitting panel according to one embodiment of the presentinvention, layers containing light-emitting organic compounds with avariety of structures can be used. In this embodiment, examples of astructure of a layer containing a light-emitting organic compoundinterposed between a pair of electrodes, which can be used in alight-emitting panel according to one embodiment of the presentinvention, will be described with reference to FIGS. 5A to 5E.

Among layers included in a layer containing a light-emitting organiccompound described in this embodiment, a layer which easily becomes aregion with particularly low electrical resistance is a chargegeneration layer containing a substance having a high hole-transportproperty and an acceptor substance with respect to the substance havinga high hole-transport property and/or an electron-injection buffercontaining a substance having a high electron-transport property and adonor substance with respect to the substance having a highelectron-transport property. This is because each layer contains asubstance which generates a carrier (specifically, an acceptor substanceor a donor substance), which leads to a reduction in electricalresistance.

Even in the case where a first electrode of one light-emitting elementand a first electrode of the other light-emitting element are apart fromeach other, when such a layer with reduced electrical resistance isprovided closer to the first electrode than a light-emitting unit,current flows from the first electrode of the one light-emitting elementto the other light-emitting element or from the first electrode of theother light-emitting element to the one light-emitting element, throughthe layer with reduced electrical resistance, so that crosstalk occurs.

Thus, one embodiment of the present invention also includes a structurein which the thickness of a portion of the charge generation layercontaining a substance having a high hole-transport property and anacceptor substance with respect to the substance having a highhole-transport property and/or the thickness of a portion of theelectron-injection buffer containing a substance having a highelectron-transport property and a donor substance with respect to thesubstance having a high electron-transport property, which overlaps withthe side surface of the partition provided between the onelight-emitting element and the other light-emitting element, is smallerthan those of the other portions. Such a structure can increaseelectrical resistance of layers, e.g., a charge generation layer and anelectron-injection buffer, whereby current flowing through the layercontaining a light-emitting organic compound between the onelight-emitting element and the other light-emitting element can besuppressed. As a result, a light-emitting panel in which the occurrenceof crosstalk is suppressed can be provided.

The thickness of the region with low electrical resistance, e.g., thecharge generation layer or the electron-injection buffer, is preferablysmall. Specifically, the thickness of the region with low electricalresistance is preferably less than or equal to 100 nm, particularly lessthan or equal to 10 nm, in the portion which overlaps with the firstelectrode.

With such a structure, the thickness of the region with low electricalresistance is less than or equal to 50 nm, preferably less than or equalto 5 nm in the portion which overlaps with the side surface of theinsulating partition. Thus, a portion with increased electricalresistance is formed on the side surface of the partition. When thethickness of the region with low electrical resistance is less than orequal to 5 nm, the layer is divided and becomes discontinuous in thedirection in which the layer spreads, so that electrical resistance isdrastically increased. As a result, a light-emitting panel in which theoccurrence of crosstalk is suppressed can be provided.

The light-emitting element described in this embodiment includes a firstelectrode, a second electrode, and a layer containing a light-emittingorganic compound (hereinafter referred to as an EL layer) providedbetween the first electrode and the second electrode. One of the firstelectrode and the second electrode serves as an anode, and the otherserves as a cathode. The EL layer is provided between the firstelectrode and the second electrode, and a structure of the EL layer maybe selected as appropriate in accordance with materials of the firstelectrode and the second electrode. Examples of the structure of thelight-emitting element will be described below; needless to say, thestructure of the light-emitting element is not limited to the examples.

<Structure Example 1 of Light-Emitting Element>

An example of a structure of a light-emitting element is illustrated inFIG. 5A. In the light-emitting element illustrated in FIG. 5A, an ELlayer is provided between an anode 1101 and a cathode 1102.

When voltage higher than the threshold voltage of the light-emittingelement is applied between the anode 1101 and the cathode 1102, holesare injected to the EL layer from the anode 1101 side and electrons areinjected to the EL layer from the cathode 1102 side. The injectedelectrons and holes are recombined in the EL layer, so that alight-emitting substance contained in the EL layer emits light.

In this specification, a layer or a stacked body which includes oneregion where electrons and holes injected from both ends are recombinedis referred to as a light-emitting unit. Therefore, it can be said thatStructure Example 1 of the light-emitting element includes onelight-emitting unit.

A light-emitting unit 1103 includes at least a light-emitting layercontaining a light-emitting substance, and may have a structure in whichthe light-emitting layer and a layer other than the light-emitting layerare stacked. Examples of the layer other than the light-emitting layerinclude a layer containing a substance having a high hole-injectionproperty, a layer containing a substance having a high hole-transportproperty, a layer containing a substance having a poor hole-transportproperty (a substance which blocks holes), a layer containing asubstance having a high electron-transport property, a layer containinga substance having a high electron-injection property, and a layercontaining a substance having a bipolar property (a substance having ahigh electron-transport property and a high hole-transport property).

An example of a specific structure of the light-emitting unit 1103 isillustrated in FIG. 5B. In the light-emitting unit 1103 illustrated inFIG. 5B, a hole-injection layer 1113, a hole-transport layer 1114, alight-emitting layer 1115, an electron-transport layer 1116, and anelectron-injection layer 1117 are stacked in this order from the anode1101 side.

<Structure Example 2 of Light-Emitting Element>

Another example of a structure of a light-emitting element isillustrated in FIG. 5C. In the light-emitting element illustrated inFIG. 5C, an EL layer including the light-emitting unit 1103 is providedbetween the anode 1101 and the cathode 1102. Further, an intermediatelayer 1104 is provided between the cathode 1102 and the light-emittingunit 1103. Note that a structure similar to that of the light-emittingunit in Structure Example 1 of the light-emitting element, which isdescribed above, can be applied to the light-emitting unit 1103 inStructure Example 2 of the light-emitting element and that thedescription of Structure Example 1 of the light-emitting element can bereferred to for the details.

The intermediate layer 1104 is formed to include at least a chargegeneration region, and may have a structure in which the chargegeneration region and a layer other than the charge generation regionare stacked. For example, a structure can be employed in which a firstcharge generation region 1104 c, an electron-relay layer 1104 b, and anelectron-injection buffer 1104 a are stacked in this order from thecathode 1102 side.

The behavior of electrons and holes in the intermediate layer 1104 willbe described. When voltage higher than the threshold voltage of thelight-emitting element is applied between the anode 1101 and the cathode1102, holes and electrons are generated in the first charge generationregion 1104 c, and the holes move into the cathode 1102 and theelectrons move into the electron-relay layer 1104 b. The electron-relaylayer 1104 b has a high electron-transport property and immediatelytransfers the electrons generated in the first charge generation region1104 c to the electron-injection buffer 1104 a. The electron-injectionbuffer 1104 a can reduce a barrier against electron injection into thelight-emitting unit 1103, so that the efficiency of the electroninjection into the light-emitting unit 1103 can be improved. Thus, theelectrons generated in the first charge generation region 1104 c areinjected into the LUMO level of the light-emitting unit 1103 through theelectron-relay layer 1104 b and the electron-injection buffer 1104 a.

In addition, the electron-relay layer 1104 b can prevent interaction inwhich the substance contained in the first charge generation region 1104c and the substance included in the electron-injection buffer 1104 areact with each other at the interface therebetween to impair thefunctions of the electron-injection buffer 1104 a and the first chargegeneration region 1104 c.

The range of choices of materials that can be used for the cathode inStructure Example 2 of the light-emitting element is wider than that ofmaterials that can be used for the cathode in Structure Example 1 of thelight-emitting element. This is because the cathode in Structure Example2 can be formed using a material having a relatively high work functionas long as the cathode receives holes generated in the intermediatelayer.

<Structure Example 3 of Light-Emitting Element>

Another example of the structure of a light-emitting element isillustrated in FIG. 5D. In the light-emitting element illustrated inFIG. 5D, an EL layer including two light-emitting units is providedbetween the anode 1101 and the cathode 1102. Furthermore, theintermediate layer 1104 is provided between a first light-emitting unit1103 a and a second light-emitting unit 1103 b.

Note that the number of the light-emitting units provided between theanode and the cathode is not limited to two. A light-emitting elementillustrated in FIG. 5E has a structure in which a plurality oflight-emitting units 1103 are stacked, that is, a so-called tandemstructure. Note that in the case where n (n is a natural number greaterthan or equal to 2) light-emitting units 1103 are provided between theanode and the cathode, the intermediate layer 1104 is provided betweenan m-th (m is a natural number greater than or equal to 1 and less thanor equal to n−1) light-emitting unit and an (m+1)-th light-emittingunit.

Note that a structure similar to that in Structure Example 1 of thelight-emitting element can be applied to the light-emitting unit 1103 inStructure Example 3 of the light-emitting element; a structure similarto that in Structure Example 2 of the light-emitting element can beapplied to the intermediate layer 1104 in Structure Example 3 of thelight-emitting element. Therefore, the description of Structure Example1 of the light-emitting element or the description of Structure Example2 of the light-emitting element can be referred to for the details.

The behavior of electrons and holes in the intermediate layer 1104provided between the light-emitting units will be described. Whenvoltage higher than the threshold voltage of the light-emitting elementis applied between the anode 1101 and the cathode 1102, holes andelectrons are generated in the intermediate layer 1104, and the holesmove into the light-emitting unit provided on the cathode 1102 side andthe electrons move into the light-emitting unit provided on the anodeside. The holes injected into the light-emitting unit provided on thecathode side are recombined with the electrons injected from the cathodeside, so that a light-emitting substance contained in the light-emittingunit emits light. The electrons injected into the light-emitting unitprovided on the anode side are recombined with the holes injected fromthe anode side, so that a light-emitting substance contained in thelight-emitting unit emits light. Thus, the holes and electrons generatedin the intermediate layer 1104 cause light emission in the respectivelight-emitting units.

Note that the light-emitting units can be provided in contact with eachother when these light-emitting units allow the same structure as theintermediate layer to be formed therebetween. Specifically, when onesurface of the light-emitting unit is provided with a charge generationregion, the charge generation region functions as a first chargegeneration region of the intermediate layer; thus, the light-emittingunits can be provided in contact with each other.

Structure Examples 1 to 3 of the light-emitting element can beimplemented in combination. For example, an intermediate layer may beprovided between the cathode and the light-emitting unit in StructureExample 3 of the light-emitting element.

<Material for Light-Emitting Element>

Next, specific materials that can be used for the light-emittingelements having the above structures will be described; materials forthe anode, the cathode, and the EL layer will be described in thisorder.

<Material for Anode>

The anode 1101 is preferably formed using a metal, an alloy, anelectrically conductive compound, a mixture of these materials, or thelike which has a high work function (specifically, a work function of4.0 eV or higher). Specific examples are indium tin oxide (ITO), indiumtin oxide containing silicon or silicon oxide, indium zinc oxide, indiumoxide containing tungsten oxide and zinc oxide, and the like.

Such conductive metal oxide films are usually formed by a sputteringmethod, but may also be formed by application of a sol-gel method or thelike. For example, an indium-zinc oxide film can be formed by asputtering method using a target in which zinc oxide is added to indiumoxide at greater than or equal to 1 wt % and less than or equal to 20 wt%. A film of indium oxide containing tungsten oxide and zinc oxide canbe formed by a sputtering method using a target in which tungsten oxideand zinc oxide are added to indium oxide at greater than or equal to 0.5wt % and less than or equal to 5 wt % and greater than or equal to 0.1wt % and less than or equal to 1 wt %, respectively.

Besides, as examples of the material for the anode 1101, the followingcan be given: gold (Au), platinum (Pt), nickel (Ni), tungsten (W),chromium (Cr), molybdenum (Mo), iron (Fe), cobalt (Co), copper (Cu),palladium (Pd), titanium (Ti), nitride of a metal material (e.g.,titanium nitride), molybdenum oxide, vanadium oxide, ruthenium oxide,tungsten oxide, manganese oxide, titanium oxide, and the like. Aconductive polymer such aspoly(3,4-ethylenedioxythiophene)/poly(styrenesulfonic acid) (PEDOT/PSS)or polyaniline/poly(styrenesulfonic acid) (PAni/PSS) may also be used.

Note that in the case where a second charge generation region isprovided in contact with the anode 1101, a variety of conductivematerials can be used for the anode 1101 regardless of their workfunctions. Specifically, besides a material which has a high workfunction, a material which has a low work function can also be used.Materials for forming the second charge generation region will bedescribed later together with materials for forming the first chargegeneration region.

<Material for Cathode>

In the case where the first charge generation region 1104 c is providedbetween the cathode 1102 and the light-emitting unit 1103 to be incontact with the cathode 1102, a variety of conductive materials can beused for the cathode 1102 regardless of their work functions.

Note that at least one of the cathode 1102 and the anode 1101 is formedusing a conductive film that transmits visible light. For the conductivefilm which transmits visible light, for example, indium oxide containingtungsten oxide, indium zinc oxide containing tungsten oxide, indiumoxide containing titanium oxide, indium tin oxide containing titaniumoxide, indium tin oxide (hereinafter referred to as ITO), indium zincoxide, and indium tin oxide to which silicon oxide is added can begiven. Further, a metal thin film whose thickness is set so that lightis transmitted (preferably, thickness approximately greater than orequal to 5 nm and less than or equal to 30 nm) can also be used.

<Material for EL Layer>

Specific examples of materials for the layers included in thelight-emitting unit 1103 will be given below.

The hole-injection layer is a layer containing a substance having a highhole-injection property. As the substance having a high hole-injectionproperty, for example, molybdenum oxide, vanadium oxide, rutheniumoxide, tungsten oxide, manganese oxide, or the like can be used. Inaddition, it is possible to use a phthalocyanine-based compound such asphthalocyanine (H₂Pc) or copper phthalocyanine (CuPc), a high moleculesuch as poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate)(PEDOT/PSS), or the like to form the hole-injection layer.

Note that the hole-injection layer may be formed using the second chargegeneration region. When the second charge generation region is used forthe hole-injection layer, a variety of conductive materials can be usedfor the anode 1101 regardless of their work functions as describedabove. Materials for forming the second charge generation region will bedescribed later together with materials for forming the first chargegeneration region.

<Hole-Transport Layer>

The hole-transport layer is a layer containing a substance having a highhole-transport property. The hole-transport layer may have a stackedlayer of two or more layers containing a substance having a highhole-transport property without limitation to a single layer. Asubstance having a hole-transport property higher than anelectron-transport property is used. In particular, a substance having ahole mobility of 10⁻⁶ cm²/Vs or higher is preferably used, in which casethe driving voltage of the light-emitting element can be reduced.

Examples of the substance having a high hole-transport property includearomatic amine compounds such as4,4′-bis[N-(1-naphthyl)-N-phenylamino]biphenyl (abbreviation: NPB orα-NPD),N,N′-bis(3-methylphenyl)-N,N′-diphenyl-[1,1′-biphenyl]-4,4′-diamine(abbreviation: TPD), 4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine(abbreviation: BPAFLP), 4,4′,4″-tris(carbazol-9-yl)triphenylamine(abbreviation: TCTA), 4,4′,4″-tris(N,N-diphenylamino)triphenylamine(abbreviation: TDATA),4,4′,4″-tris[N-(3-methylphenyl)-N-phenylamino]triphenylamine(abbreviation: MTDATA), and4,4′-bis[N-(spiro-9,9′-bifluoren-2-yl)-N-phenylamino]biphenyl(abbreviation: BSPB). Examples further include3-[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole(abbreviation: PCzPCA1),3,6-bis[N-(9-phenylcarbazol-3-yl)-N-phenylamino]-9-phenylcarbazole(abbreviation: PCzPCA2),3-[N-(1-naphthyl)-N-(9-phenylcarbazol-3-yl)amino]-9-phenylcarbazole(abbreviation: PCzPCN1), and the like. Examples further includecarbazole derivatives such as 4,4′-di(N-carbazolyl)biphenyl(abbreviation: CBP), 1,3,5-tris[4-(N-carbazolyl)phenyl]benzene(abbreviation: TCPB), and9-[4-(10-phenyl-9-anthracenyl)phenyl]-9H-carbazole (abbreviation: CzPA).

In addition to the above substances, a high molecular compound such aspoly(N-vinylcarbazole) (abbreviation: PVK), poly(4-vinyltriphenylamine)(abbreviation: PVTPA),poly[N-(4-{N′-[4-(4-diphenylamino)phenyl]phenyl-N′-phenylamino}phenyl)methacrylamide](abbreviation: PTPDMA), orpoly[N,N′-bis(4-butylphenyl)-N,N′-bis(phenyl)benzidine](abbreviation:Poly-TPD) can be used for the hole-transport layer.

<Light-Emitting Layer>

The light-emitting layer is a layer containing a light-emittingsubstance. The light-emitting layer may have a stacked layer of two ormore layers containing a light-emitting substance without limitation toa single layer. A fluorescent compound or a phosphorescent compound canbe used as the light-emitting substance. A phosphorescent compound ispreferably used as the light-emitting substance, in which case theemission efficiency of the light-emitting element can be increased.

Examples of a fluorescent compound that can be used as thelight-emitting substance includeN,N′-bis[4-(9H-carbazol-9-yl)phenyl]-N,N′-diphenylstilbene-4,4′-diamine(abbreviation: YGA2S),4-(9H-carbazol-9-yl)-4′-(10-phenyl-9-anthryl)triphenylamine(abbreviation: YGAPA),4-(9H-carbazol-9-yl)-4′-(9,10-diphenyl-2-anthryl)triphenylamine(abbreviation: 2YGAPPA),N,9-diphenyl-N-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: PCAPA), perylene, 2,5,8,11-tetra-tert-butylperylene(abbreviation: TBP),4-(10-phenyl-9-anthryl)-4′-(9-phenyl-9H-carbazol-3-yl)triphenylamine(abbreviation: PCBAPA),N,N″-(2-tert-butylanthracene-9,10-diyldi-4,1-phenylene)bis[N,N′,N′-triphenyl-1,4-phenylenediamine](abbreviation: DPABPA),N,9-diphenyl-N-[4-(9,10-diphenyl-2-anthryl)phenyl]-9H-carbazol-3-amine(abbreviation: 2PCAPPA),N-[4-(9,10-diphenyl-2-anthryl)phenyl]-N,N′,N′-triphenyl-1,4-phenylenediamine(abbreviation: 2DPAPPA),N,N,N′,N′,N′,N″′,N″′-octaphenyldibenzo[g,p]chrysene-2,7,10,15-tetraamine(abbreviation: DBC1), coumarin 30,N-(9,10-diphenyl-2-anthryl)-N,9-diphenyl-9H-carbazol-3-amine(abbreviation: 2PCAPA),N-[9,10-bis(1,1′-biphenyl-2-yl)-2-anthryl]-N,9-diphenyl-9H-carbazol-3-amine(abbreviation: 2PCABPhA),N-(9,10-diphenyl-2-anthryl)-N,N′,N′-triphenyl-1,4-phenylenediamine(abbreviation: 2DPAPA),N-[9,10-bis(1,1′-biphenyl-2-yl)-2-anthryl]-N,N′,N′-triphenyl-1,4-phenylenediamine(abbreviation: 2DPABPhA),9,10-bis(1,1′-biphenyl-2-yl)-N-[4-(9H-carbazol-9-yl)phenyl]-N-phenylanthracen-2-amine(abbreviation: 2YGABPhA), N,N,9-triphenylanthracen-9-amine(abbreviation: DPhAPhA), coumarin 545T, N,N′-diphenylquinacridone(abbreviation: DPQd), rubrene,5,12-bis(1,1′-biphenyl-4-yl)-6,11-diphenyltetracene (abbreviation: BPT),2-(2-{2-[4-(dimethylamino)phenyl]ethenyl}-6-methyl-4H-pyran-4-ylidene)propanedinitrile(abbreviation: DCM1),2-{2-methyl-6-[2-(2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: DCM2),N,N,N′,N′-tetrakis(4-methylphenyl)tetracene-5,11-diamine (abbreviation:p-mPhTD),7,14-diphenyl-N,N′,N′-tetrakis(4-methylphenyl)acenaphtho[1,2-a]fluoranthene-3,10-diamine(abbreviation: p-mPhAFD),2-{2-isopropyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: DCJTI),2-{2-tert-butyl-6-[2-(1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: DCJTB),2-(2,6-bis{2-[4-(dimethylamino)phenyl]ethenyl}-4H-pyran-4-ylidene)propanedinitrile(abbreviation: BisDCM),2-{2,6-bis[2-(8-methoxy-1,1,7,7-tetramethyl-2,3,6,7-tetrahydro-1H,5H-benzo[ij]quinolizin-9-yl)ethenyl]-4H-pyran-4-ylidene}propanedinitrile(abbreviation: BisDCJTM), SD1 (product name; manufactured by SFC Co.,Ltd), and the like.

Examples of a phosphorescent compound that can be used as thelight-emitting substance includebis[2-(4′,6′-difluorophenyl)pyridinato-N,C^(2′)]iridium(III)tetrakis(1-pyrazolyl)borate(abbreviation: FIr6),bis[2-(4′,6′-difluorophenyl)pyridinato-N,C^(2′)]iridium(III) picolinate(abbreviation: FIrpic),bis[2-(3′,5′-bistrifluoromethylphenyl)pyridinato-N, C^(2′)]iridium(III)picolinate (abbreviation: Ir(CF₃ppy)₂(pic)),bis[2-(4′,6′-difluorophenyl)pyridinato-N,C^(2′)]iridium(II)acetylacetonate (abbreviation: FIracac),tris(2-phenylpyridinato)iridium(III) (abbreviation: Ir(ppy)₃),bis(2-phenylpyridinato)iridium(III) acetylacetonate (abbreviation:Ir(ppy)₂(acac)), bis(benzo[h]quinolinato)iridium(III) acetylacetonate(abbreviation: Ir(bzq)₂(acac)),bis(2,4-diphenyl-1,3-oxazolato-N,C^(2′))iridium(III) acetylacetonate(abbreviation: Ir(dpo)₂(acac)),bis{2-[4′-(perfluorophenyl)phenyl]pyridinato-N,C^(2′)}iridium(III)acetylacetonate (abbreviation: Ir(p-PF-ph)₂(acac)),bis(2-phenylbenzothiazolato-N,C^(2′))iridium(III) acetylacetonate(abbreviation: Ir(bt)₂(acac)),bis[2-(2′-benzo[4,5-a]thienyl)pyridinato-N,C^(3′)]iridium(III)acetylacetonate (abbreviation: Ir(btp)₂(acac)),bis(1-phenylisoquinolinato-N,C^(2′))iridium(II) acetylacetonate(abbreviation: Ir(piq)₂(acac)),(acetylacetonato)bis[2,3-bis(4-fluorophenyl)quinoxalinato]iridium(III)(abbreviation: Ir(Fdpq)₂(acac)),(acetylacetonato)bis(2,3,5-triphenylpyrazinato)iridium(III)(abbreviation: Ir(tppr)₂(acac)),(2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphine)platinum(II)(abbreviation: PtOEP), tris(acetylacetonato) (monophenanthroline)terbium(III) (abbreviation: Tb(acac)₃(Phen)),tris(1,3-diphenyl-1,3-propanedionato) (monophenanthroline)europium(III)(abbreviation: Eu(DBM)₃(Phen)),tris[1-(2-thenoyl)-3,3,3-trifluoroacetonato](monophenanthroline)europium(III)(abbreviation: Eu(TTA)₃(Phen)), bis(2,3,5-triphenylpyrazinato)(dipivaloylmethanato)iridium(III) (abbreviation: Ir(tppr)₂(dpm)), andthe like.

The light-emitting substance is preferably dispersed in a host material.A host material preferably has higher excitation energy than thelight-emitting substance.

As the host material, it is possible to use an aromatic amine compoundsuch as NPB, TPD, TCTA, TDATA, MTDATA, or BSPB; or a carbazolederivative such as PCzPCA1, PCzPCA2, PCzPCN1, CBP, TCPB, CzPA,9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation:PCzPA), or 4-phenyl-4′-(9-phenyl-9H-carbazol-3-yl)triphenylamine(abbreviation: PCBA1BP). Alternatively, it is possible to use asubstance which has a high hole-transport property and includes a highmolecular compound, such as PVK, PVTPA, PTPDMA, or Poly-TPD.Alternatively, it is possible to use a metal complex having a quinolineskeleton or a benzoquinoline skeleton, such astris(8-quinolinolato)aluminum (abbreviation: Alq),tris(4-methyl-8-quinolinolato)aluminum (abbreviation: Almq₃),bis(10-hydroxybenzo[h]quinolinato)beryllium (abbreviation: BeBq₂), orbis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminum (abbreviation:BAlq). Alternatively, it is possible to use a metal complex having anoxazole-based or thiazole-based ligand, such asbis[2-(2′-hydroxyphenyl)benzoxazolato]zinc (abbreviation: Zn(BOX)₂) orbis[2-(2′-hydroxyphenyl)benzothiazolato]zinc (abbreviation: Zn(BTZ)₂).Further alternatively, it is possible to use a substance having a highelectron-transport property, such as2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (abbreviation:PBD), 1,3-bis[5-(p-tert-butylphenyl)-1,3,4-oxadiazol-2-yl]benzene(abbreviation: OXD-7),9-[4-(5-phenyl-1,3,4-oxadiazol-2-yl)phenyl]carbazole (abbreviation:CO11), 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole(abbreviation: TAZ), bathophenanthroline (abbreviation: BPhen), orbathocuproine (abbreviation: BCP).

<Electron-Transport Layer>

The electron-transport layer is a layer containing a substance having ahigh electron-transport property. The electron-transport layer may havea stacked layer of two or more layers containing a substance having ahigh electron-transport property without limitation to a single layer. Asubstance having an electron-transport property higher than ahole-transport property is used. In particular, a substance having anelectron mobility of 10⁻⁶ cm²/Vs or higher is preferably used, in whichcase the driving voltage of the light-emitting element can be reduced.

As the substance having a high electron-transport property, for example,a metal complex having a quinoline skeleton or a benzoquinolineskeleton, such as Alq, Almq₃, BeBq₂, or BAlq, or the like can be used.Alternatively, a metal complex having an oxazole-based or thiazole-basedligand, such as Zn(BOX)₂ or Zn(BTZ)₂, or the like can be used. Furtheralternatively, PBD, OXD-7, CO11, TAZ, BPhen, BCP,2-[4-(dibenzothiophen-4-yl)phenyl]-1-phenyl-1H-benzimidazole(abbreviation: DBTBIm-II), or the like can be used.

Besides the above-described materials, the electron-transport layer canbe formed using a high molecular compound such aspoly[(9,9-dihexylfluorene-2,7-diyl)-co-(pyridine-3,5-diyl)](abbreviation:PF-Py) orpoly[(9,9-dioctylfluorene-2,7-diyl)-co-(2,2′-bipyridine-6,6′-diyl)](abbreviation:PF-BPy).

<Electron-Injection Layer>

The electron-injection layer is a layer containing a substance having ahigh electron-injection property. The electron-injection layer may havea stacked layer of two or more layers containing a substance having ahigh electron-injection property without limitation to a single layer.The electron-injection layer is preferably provided, in which case theefficiency of electron injection from the cathode 1102 can be increased,so that the driving voltage of the light-emitting element can bereduced.

As the substance having a high electron-injection property, thefollowing can be given: an alkali metal and an alkaline earth metal suchas lithium (Li), cesium (Cs), or calcium (Ca), and a compound thereof,such as lithium fluoride (LiF), cesium fluoride (CsF), or calciumfluoride (CaF₂). Alternatively, a layer containing a substance having anelectron-transport property and an alkali metal, an alkaline earthmetal, magnesium (Mg), or a compound thereof (e.g., an Alq layercontaining magnesium (Mg)) can be used.

<Material for Charge Generation Region>

The first charge generation region 1104 c and the second chargegeneration region are regions containing a substance having a highhole-transport property and an acceptor substance with respect to thesubstance having a high hole-transport property. The charge generationregion may contain a substance having a high hole-transport property andan acceptor substance in the same film or may be a stack of a layercontaining a substance having a high hole-transport property and a layercontaining an acceptor substance with respect to the substance having ahigh hole-transport property. Note that in the case of a stacked-layerstructure in which the first charge generation region is provided on thecathode side, the layer containing the substance having a highhole-transport property is in contact with the cathode 1102, and in thecase of a stacked-layer structure in which the second charge generationregion is provided on the anode side, the layer containing an acceptorsubstance is in contact with the anode 1101.

Note that the acceptor substance is preferably added to the chargegeneration region so that the mass ratio of the acceptor substance tothe substance having a high hole-transport property is from 0.1:1 to4.0:1.

As the acceptor substance that is used for the charge generation region,a transition metal oxide and an oxide of a metal belonging to any ofGroups 4 to 8 of the periodic table can be given. Specifically,molybdenum oxide is particularly preferable. Note that molybdenum oxidehas a low hygroscopic property.

As the substance having a high hole-transport property that is used forthe charge generation region, any of a variety of organic compounds suchas an aromatic amine compound, a carbazole derivative, an aromatichydrocarbon, and a high molecular compound (such as an oligomer, adendrimer, or a polymer) can be used. Specifically, a substance having ahole mobility of 10⁻⁶ cm²/Vs or higher is preferably used. Note that anyother substance may be used as long as the hole transport propertythereof is higher than the electron-transport property thereof.

<Material for Electron-Relay Layer>

The electron-relay layer 1104 b is a layer that can immediately receiveelectrons extracted by the acceptor substance in the first chargegeneration region 1104 c. Therefore, the electron-relay layer 1104 b isa layer containing a substance having a high electron-transportproperty, and the LUMO level of the electron-relay layer 1104 b ispositioned between the acceptor level of the acceptor substance in thefirst charge generation region 1104 c and the LUMO level of thelight-emitting unit 1103 with which the electron-relay layer is incontact. Specifically, it is preferable that the LUMO level of theelectron-relay layer 1104 b be approximately greater than or equal to−5.0 eV and less than or equal to −3.0 eV.

As examples of the substance used for the electron-relay layer 1104 b, aperylene derivative and a nitrogen-containing condensed aromaticcompound can be given. Note that a nitrogen-containing condensedaromatic compound is preferably used for the electron-relay layer 1104 bbecause of its stability. Among nitrogen-containing condensed aromaticcompounds, a compound having an electron-withdrawing group such as acyano group or a fluoro group is preferably used, in which caseelectrons can be received more easily in the electron-relay layer 1104b.

As specific examples of the perylene derivative, the following can begiven: 3,4,9,10-perylenetetracarboxylic dianhydride (abbreviation:PTCDA), 3,4,9,10-perylenetetracarboxylic bisbenzimidazole (abbreviation:PTCBI), N,N′-dioctyl-3,4,9,10-perylenetetracarboxylic diimide(abbreviation: PTCDI-C8H), N,N′-dihexyl-3,4,9,10-perylenetetracarboxylicdiimide (abbreviation: Hex PTC), and the like.

As specific examples of the nitrogen-containing condensed aromaticcompound, the following can be given:pirazino[2,3-f][1,10]phenanthroline-2,3-dicarbonitrile (abbreviation:PPDN), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene(abbreviation: HAT(CN)₆), 2,3-diphenylpyrido[2,3-b]pyrazine(abbreviation: 2PYPR), 2,3-bis(4-fluorophenyl)pyrido[2,3-b]pyrazine(abbreviation: F2PYPR), and the like.

Besides, 7,7,8,8-tetracyanoquinodimethane (abbreviation: TCNQ),1,4,5,8-naphthalenetetracarboxylic dianhydride (abbreviation: NTCDA),perfluoropentacene, copper hexadecafluorophthalocyanine (abbreviation:F₁₆CuPc),N,N′-bis(2,2,3,3,4,4,5,5,6,6,7,7,8,8,8-pentadecafluorooctyl)-1,4,5,8-naphthalenetetracarboxylicdiimide (abbreviation: NTCDI-C8F),3′,4′-dibutyl-5,5″-bis(dicyanomethylene)-5,5″-dihydro-2,2′:5′,2″-terthiophen(abbreviation: DCMT), methanofullerene (e.g., [6,6]-phenyl C₆₁ butyricacid methyl ester), or the like can be used for the electron-relay layer1104 b.

<Material for Electron-Injection Buffer>

The electron-injection buffer 1104 a is a layer which facilitateselectron injection from the first charge generation region 1104 c intothe light-emitting unit 1103. By providing the electron-injection buffer1104 a between the first charge generation region 1104 c and thelight-emitting unit 1103, the injection barrier therebetween can bereduced.

Any of the following substances having a high electron-injectionproperty can be used for the electron-injection buffer 1104 a: an alkalimetal, an alkaline earth metal, a rare earth metal, a compound of theabove metal (e.g., an alkali metal compound (e.g., an oxide such aslithium oxide, a halide, and a carbonate such as lithium carbonate orcesium carbonate), an alkaline earth metal compound (e.g., an oxide, ahalide, and a carbonate), a rare earth metal compound (e.g., an oxide, ahalide, and a carbonate)), and the like.

Further, in the case where the electron-injection buffer 1104 a containsa substance having a high electron-transport property and a donorsubstance with respect to the substance having a high electron-transportproperty, the donor substance is preferably added so that the mass ratioof the donor substance to the substance having a high electron-transportproperty is from 0.001:1 to 0.1:1. Note that as the donor substance, anorganic compound such as tetrathianaphthacene (abbreviation: TTN),nickelocene, or decamethylnickelocene can be used as well as an alkalimetal, an alkaline earth metal, a rare earth metal, a compound of theabove metal (e.g., an alkali metal compound (e.g., an oxide such aslithium oxide, a halide, and a carbonate such as lithium carbonate orcesium carbonate), an alkaline earth metal compound (e.g., an oxide, ahalide, and a carbonate), and a rare earth metal compound (e.g., anoxide, a halide, and a carbonate). Note that as the substance having ahigh electron-transport property, a material similar to the abovematerial for the electron-transport layer which can be formed in part ofthe light-emitting unit 1103 can be used.

<Method for Manufacturing Light-Emitting Element>

A method for manufacturing the light-emitting element will be described.Over the first electrode, the layers described above are combined asappropriate to form an EL layer. Any of a variety of methods (e.g., adry process or a wet process) can be used for the EL layer depending onthe material for the EL layer. For example, a vacuum evaporation method,an inkjet method, a spin coating method, or the like may be selected.Note that a different method may be employed for each layer. A secondelectrode is formed over the EL layer. In the above manner, thelight-emitting element is manufactured.

The light-emitting element described in this embodiment can bemanufactured by combining the above materials. Light emission from theabove light-emitting substance can be obtained with this light-emittingelement, and the emission color can be selected by changing the type ofthe light-emitting substance.

Further, when a plurality of light-emitting substances which emit lightof different colors are used, the width of the emission spectrum can beexpanded, whereby, for example, white light emission can be obtained. Inorder to obtain white light emission, for example, a structure may beemployed in which at least two layers containing light-emittingsubstances are provided so that light of complementary colors isemitted. Specific examples of complementary colors are a combination ofblue and yellow, a combination of blue-green and red, and the like.

Further, in order to obtain white light emission with an excellent colorrendering property, an emission spectrum needs to spread through theentire visible light region. For example, layers emitting light of blue,green, and red may be provided.

Note that this embodiment can be combined with any of the otherembodiments in this specification as appropriate.

Embodiment 4

In this embodiment, a light-emitting device including a light-emittingpanel according to one embodiment of the present invention will bedescribed with reference to FIGS. 6A and 6B. In particular, an activematrix light-emitting device and a passive matrix light-emitting device,in which light is extracted to the second electrode side (also referredto as light-emitting devices with a top-emission type) will bedescribed. The device has the following structure: the thickness A₁ of aportion of a layer containing a light-emitting organic compound, whichoverlaps with a side surface of a partition, is smaller than ½ of thethickness A₀ of a portion of the layer containing a light-emittingorganic compound, which is in contact with a first electrode, and theratio (B₁/B₀) of the thickness B₁ of a portion of a second electrode,which overlaps with the side surface of the partition, and the thicknessB₀ of a portion of the second electrode, which overlaps with the firstelectrode, is higher than the ratio (A₁/A₀).

<Active Matrix Light-Emitting Device>

A structure in which the light-emitting panel according to oneembodiment of the present invention is applied to an active matrixlight-emitting device is illustrated in FIGS. 6A and 6B. Note that FIG.6A is a top view of the light-emitting device, and FIG. 6B is across-sectional view taken along lines A-B and C-D in FIG. 6A.

An active matrix light-emitting device 1400 includes a driver circuitportion (source side driver circuit) 1401, a pixel portion 1402, adriver circuit portion (gate side driver circuit) 1403, a sealingsubstrate 1404, and a sealant 1405 (see FIG. 6A). Note that a portionenclosed by the sealant 1405 is a space.

The light-emitting device 1400 receives a video signal, a clock signal,a start signal, a reset signal, and the like from an FPC (flexibleprinted circuit) 1409 that is an external input terminal. Note thatalthough only the FPC is illustrated here, the FPC may be provided witha printed wiring board (PWB). The light-emitting device in thisspecification includes, in its category, not only a light-emittingdevice itself but also a light-emitting device provided with an FPC or aPWB.

Next, the structure of the light-emitting device 1400 will be describedwith reference to the cross-sectional view of FIG. 6B. Thelight-emitting device 1400 includes a driver circuit portion includingthe source side driver circuit 1401 illustrated over an elementsubstrate 1410 and the pixel portion 1402 including a pixel illustrated.Further, the light-emitting device 1400 includes a lead wiring 1408 fortransmitting signals that are to be input to the source side drivercircuit 1401 and the gate side driver circuit 1403.

Note that although the source side driver circuit 1401 includes a CMOScircuit in which an n-channel transistor 1423 and a p-channel transistor1424 are combined in this embodiment, the driver circuit is not limitedto this structure and may be any of a variety of circuits, such as aCMOS circuit, a PMOS circuit, or an NMOS circuit. Although adriver-integrated type in which a driver circuit is formed over thesubstrate is described in this embodiment, the present invention is notlimited thereto, and the driver circuit can be formed not over thesubstrate but outside the substrate.

<Structure of Transistor>

Note that any of a variety of semiconductors can be used for a regionwhere a channel of a transistor is formed. Specifically, an oxidesemiconductor or the like can be used as well as amorphous silicon orpolysilicon.

A single crystal semiconductor can be used in a region where a channelof a transistor is formed. When a single crystal semiconductor is usedfor a channel formation region, the size of the transistor can bereduced, which results in higher-definition pixels in a display portion.

As a single crystal semiconductor used for forming a semiconductorlayer, a semiconductor substrate, typical examples of which include asingle crystal semiconductor substrate formed using elements belongingto Group 14, such as a single crystal silicon substrate, a singlecrystal germanium substrate, or a single crystal silicon germaniumsubstrate, and a compound semiconductor substrate (e.g., a SiCsubstrate, a sapphire substrate, and a GaN substrate), can be used.Preferred one is a silicon-on-insulator (SOI) substrate in which asingle crystal semiconductor layer is provided on an insulating surface.

As a method for forming the SOI substrate, any of the following methodscan be used: a method in which oxygen ions are implanted into amirror-polished wafer and then heating is performed at a hightemperature, whereby an oxide layer is formed at a certain depth from asurface of the wafer and a defect caused in the surface layer iseliminated; a method in which a semiconductor substrate is separated byutilizing the growth of microvoids, which are formed by hydrogen ionirradiation, by heat treatment; a method in which a single crystalsemiconductor layer is formed on an insulating surface by crystalgrowth; and the like.

In this embodiment, ions are added through one surface of a singlecrystal semiconductor substrate, an embrittlement layer is formed at acertain depth from the one surface of the single crystal semiconductorsubstrate, and an insulating layer is formed on the one surface of thesingle crystal semiconductor substrate or over the element substrate1410. Heat treatment is performed in a state where the single crystalsemiconductor substrate and the element substrate 1410 are bonded toeach other with the insulating layer interposed therebetween, so that acrack is generated in the embrittlement layer and the single crystalsemiconductor substrate is separated along the embrittlement layer.Thus, a single crystal semiconductor layer, which is separated from thesingle crystal semiconductor substrate, is formed as a semiconductorlayer over the element substrate 1410. Note that a glass substrate canbe used as the element substrate 1410.

Regions electrically insulated from each other may be formed in thesemiconductor substrate, and transistors 1411 and 1412 may bemanufactured using the regions electrically insulated from each other.

When a channel formation region is formed using a single crystalsemiconductor, variations in electrical characteristics, such asthreshold voltage, between transistors due to bonding defects at grainboundaries can be reduced. Thus, in the display device according to oneembodiment of the present invention, the light-emitting elements can beoperated normally without placing a circuit for compensating thresholdvoltage in each pixel. The number of circuit components per pixel cantherefore be reduced, which results in an increase in the flexibility inlayout. Thus, a high-definition display device can be obtained. Forexample, a display device having a matrix of a plurality of pixels,specifically greater than or equal to 350 pixels per inch (i.e., thehorizontal resolution is greater than or equal to 350 pixels per inch(ppi)), more preferably greater than or equal to 400 pixels per inch(i.e., the horizontal resolution is greater than or equal to 400 ppi)can be obtained.

Moreover, a transistor in which a channel formation region is formedusing a single crystal semiconductor can be downsized while currentdrive capability is kept high. When the downsized transistor is used, areduction in the area of a circuit portion that does not contribute todisplay, which results in an increase in the display area in the displayportion and a reduction in the frame size of the display device.

<Structure of Pixel Portion>

The pixel portion 1402 is provided with a plurality of pixels. The pixelincludes a light-emitting element 1418, the current controllingtransistor 1412 whose drain electrode is connected to a first electrode1413 of the light-emitting element 1418, and the switching transistor1411. For the pixel portion 1402, for example, the structure describedin Embodiment 1 can be employed.

The light-emitting element 1418 included in the light-emitting panelincludes the first electrode 1413, a second electrode 1417, and a layer1416 containing a light-emitting organic compound. Note that a partition1414 is formed so as to cover an end portion of the first electrode1413.

The partition 1414 is formed to have a curved surface with curvature atan upper end portion or a lower end portion thereof. The partition 1414can be formed using either a negative photosensitive resin which becomesinsoluble in an etchant by light irradiation or a positivephotosensitive resin which becomes soluble in an etchant by lightirradiation. For example, in the case of using positive photosensitiveacrylic as a material for the partition 1414, it is preferable that thepartition 1414 be formed so as to have a curved surface with radius ofcurvature (0.2 mm to 3 μm) only at the upper end portion thereof. Here,the partition 1414 is formed using a positive photosensitive polyimidefilm.

Note that when the partition has a light-blocking property, reflectionof external light on a reflective film included in the light-emittingpanel can be suppressed. When a reflective film which extends outsidethe light-emitting element 1418 reflects external light, the contrast ofthe light-emitting device is lowered; for that reason, bright lightemission cannot be obtained. In the case where the partition has alight-blocking property, the partition can be formed using a resin layercolored with black.

As a structure of the light-emitting element 1418, the structure of thelight-emitting element described in Embodiment 3 can be employed, forexample.

Specifically, a structure in which white light is emitted can beemployed for the layer 1416 containing a light-emitting organiccompound.

A color filter 1434 can be provided so as to overlap with thelight-emitting element 1418. In addition, a light-blocking film 1435(also referred to as a black matrix) can be provided so as to overlap apartition between adjacent light-emitting elements. Note that the colorfilter 1434 and the light-blocking film 1435 can be provided over thesealing substrate 1404.

With the first electrode 1413 and the second electrode 1417 of thelight-emitting element 1418, a micro resonator (also referred to asmicrocavity) can be formed. For example, a conductive film whichreflects light emitted from the layer 1416 containing a light-emittingorganic compound is used as the first electrode 1413, and asemi-transmissive and semi-reflective conductive film which reflectspart of light and transmits part of light is used as the secondelectrode 1417.

An optical adjustment layer can be provided between the first electrodeand the second electrode. The optical adjustment layer is a layer whichadjusts the optical path length between the reflective first electrode1413 and the semi-transmissive and semi-reflective second electrode1417. By adjustment of the thickness of the optical adjustment layer,the wavelength of light preferentially extracted from the secondelectrode 1417 can be adjusted.

For a material which can be used for the optical adjustment layer, alayer containing a light-emitting organic compound can be used. Forexample, the thickness of the optical adjustment layer may be adjustedusing a charge generation region. In particular, a region containing asubstance having a high hole-transport property and an acceptorsubstance with respect to the substance having a high hole-transportproperty is preferably used for the optical adjustment layer because anincrease of driving voltage can be suppressed even when the opticaladjustment layer has a large thickness.

For another material which can be used for the optical adjustment layer,a light-transmitting conductive film which transmits light emitted fromthe layer 1416 containing a light-emitting organic compound can be used.For example, the light-transmitting conductive film is stacked on asurface of a reflective conductive film; thus, the first electrode 1413can be formed. Such a structure is preferable because the thickness ofan optical adjustment layer of an adjacent first electrode is easilychanged.

<Sealing Structure>

The light-emitting device 1400 described in this embodiment has astructure in which the light-emitting element 1418 is sealed in a space1407 enclosed by the element substrate 1410, the sealing substrate 1404,and the sealant 1405. Note that the space 1407 is filled with a filler.There are cases where the space 1407 is filled with an inert gas (suchas nitrogen or argon) or the sealant 1405. Further, a material foradsorbing an impurity, such as a desiccant, may be provided.

The sealant 1405 and the sealing substrate 1404 are desirably formedusing a material which does not transmit an impurity in the air (e.g.moisture or oxygen) as much as possible. An epoxy-based resin, glassfrit, or the like can be used for the sealant 1405.

For a material which can be used for the sealing substrate 1404, a glasssubstrate, a quartz substrate, a plastic substrate formed of polyvinilfluoride (PVF), polyester, acrylic, or the like, fiberglass-reinforcedplastics (FRP), or the like can be used.

A spacer 1433 can be provided over the partition 1414. The spacer 1433may have a spherical shape, a columnar shape, and/or may exhibit arounded top surface. Further, the spacer 1433 may be made of anelectrically insulating material. By providing the spacer 1433 over thepartition 1414, the sealing substrate 1404 which is bent by applicationof external force can be prevented from damaging the light-emittingelement 1418.

The above-described active matrix light-emitting device according to oneembodiment of the present invention is provided with a light-emittingpanel according to one embodiment of the present invention having astructure in which the thickness A₁ of the portion of the layercontaining a light-emitting organic compound, which overlaps with theside surface of the partition, is smaller than ½ of the thickness A₀ ofthe portion of the layer containing a light-emitting organic compound,which is in contact with the first electrode, and the ratio (B₁/B₀) ofthe thickness B₁ of the portion of the second electrode, which overlapswith the side surface of the partition, to the thickness B₀ of theportion of the second electrode, which overlaps with the firstelectrode, is higher than the ratio (A₁/A₀). As a result, alight-emitting device in which the occurrence of crosstalk is suppressedcan be provided.

Embodiment 5

In this embodiment, examples of a light-emitting device provided with alight-emitting panel of one embodiment of the present invention in whichthe thickness A₁ of a portion of a layer containing a light-emittingorganic compound, which overlaps with a side surface of a partition, issmaller than ½ of the thickness A₀ of a portion of the layer containinga light-emitting organic compound, which is in contact with a firstelectrode, and the ratio (B₁/B₀) of the thickness B₁ of a portion of asecond electrode, which overlaps with the side surface of the partition,to the thickness B₀ of a portion of the second electrode, which overlapswith the first electrode, is higher than the ratio (A₁/A₀), will bedescribed with reference to FIGS. 7A to 7E.

Examples of the electronic devices to which the light-emitting device isapplied are television devices (also referred to as TV or televisionreceivers), monitors for computers and the like, cameras such as digitalcameras and digital video cameras, digital photo frames, cellular phones(also referred to as portable telephone devices), portable gamemachines, portable information terminals, audio playback devices, largegame machines such as pachinko machines, and the like. Specific examplesof these electronic devices are illustrated in FIGS. 7A to 7E.

FIG. 7A illustrates an example of a television device. In a televisiondevice 7100, a display portion 7103 is incorporated in a housing 7101.The display portion 7103 is capable of displaying images, and thelight-emitting device can be used for the display portion 7103. Inaddition, here, the housing 7101 is supported by a stand 7105.

The television device 7100 can be operated by an operation switch of thehousing 7101 or a separate remote controller 7110. With operation keys7109 of the remote controller 7110, channels and volume can becontrolled and images displayed on the display portion 7103 can becontrolled. Furthermore, the remote controller 7110 may be provided witha display portion 7107 for displaying data output from the remotecontroller 7110.

Note that the television device 7100 is provided with a receiver, amodem, and the like. With the receiver, a general television broadcastcan be received. Furthermore, when the television device 7100 isconnected to a communication network by wired or wireless connection viathe modem, one-way (from a transmitter to a receiver) or two-way(between a transmitter and a receiver, between receivers, or the like)data communication can be performed.

FIG. 7B illustrates a computer, which includes a main body 7201, ahousing 7202, a display portion 7203, a keyboard 7204, an externalconnecting port 7205, a pointing device 7206, and the like. Note thatthis computer is manufactured using the light-emitting device for thedisplay portion 7203.

FIG. 7C illustrates a portable game machine, which includes twohousings, a housing 7301 and a housing 7302, which are connected with ajoint portion 7303 so that the portable game machine can be opened orfolded. A display portion 7304 is incorporated in the housing 7301 and adisplay portion 7305 is incorporated in the housing 7302. In addition,the portable game machine illustrated in FIG. 7C includes a speakerportion 7306, a recording medium insertion portion 7307, an LED lamp7308, an input means (an operation key 7309, a connection terminal 7310,a sensor 7311 (a sensor having a function of measuring force,displacement, position, speed, acceleration, angular velocity,rotational frequency, distance, light, liquid, magnetism, temperature,chemical substance, sound, time, hardness, electric field, current,voltage, electric power, radiation, flow rate, humidity, gradient,oscillation, odor, or infrared rays), or a microphone 7312), and thelike. Needless to say, the structure of the portable game machine is notlimited to the above as long as a light-emitting device can be used forat least either the display portion 7304 or the display portion 7305, orboth, and may include other accessories as appropriate. The portablegame machine illustrated in FIG. 7C has a function of reading out aprogram or data stored in a storage medium to display it on the displayportion, and a function of sharing information with another portablegame machine by wireless communication. The portable game machine inFIG. 7C can have a variety of functions without limitation to the abovefunctions.

FIG. 7D illustrates an example of a mobile phone. The mobile phone 7400is provided with a display portion 7402 incorporated in a housing 7401,operation buttons 7403, an external connection port 7404, a speaker7405, a microphone 7406, and the like. Note that the mobile phone 7400is manufactured using the light-emitting device for the display portion7402.

When the display portion 7402 of the mobile phone 7400 illustrated inFIG. 7D is touched with a finger or the like, data can be input into themobile phone 7400. Further, operations such as making a call andcomposing an e-mail can be performed by touch on the display portion7402 with a finger or the like.

There are mainly three screen modes of the display portion 7402. Thefirst mode is a display mode mainly for displaying images. The secondmode is an input mode mainly for inputting data such as text. The thirdmode is a display-and-input mode in which two modes of the display modeand the input mode are combined.

For example, in the case of making a call or composing an e-mail, a textinput mode mainly for inputting text is selected for the display portion7402 so that text displayed on a screen can be input. In this case, itis preferable to display a keyboard or number buttons on almost theentire screen of the display portion 7402.

When a detection device including a sensor for detecting inclination,such as a gyroscope or an acceleration sensor, is provided inside themobile phone 7400, display on the screen of the display portion 7402 canbe automatically changed by determining the orientation of the mobilephone 7400 (whether the mobile phone is placed horizontally orvertically for a landscape mode or a portrait mode).

The screen modes are switched by touching the display portion 7402 oroperating the operation buttons 7403 of the housing 7401. The screenmodes can also be switched depending on kinds of images displayed on thedisplay portion 7402. For example, when a signal of an image displayedon the display portion is a signal of moving image data, the screen modeis switched to the display mode. When the signal is a signal of textdata, the screen mode is switched to the input mode.

Moreover, in the input mode, when input by touching the display portion7402 is not performed within a specified period while a signal detectedby an optical sensor in the display portion 7402 is detected, the screenmode may be controlled so as to be switched from the input mode to thedisplay mode.

The display portion 7402 may function as an image sensor. For example,an image of a palm print, a fingerprint, or the like is taken by touchon the display portion 7402 with the palm or the finger, wherebypersonal authentication can be performed. Further, by providing abacklight or a sensing light source which emits a near-infrared light inthe display portion, an image of a finger vein, a palm vein, or the likecan be taken.

FIG. 7E illustrates an example of a lighting device. In a lightingdevice 7500, light-emitting devices 7503 a to 7503 d formed according toone embodiment of the present invention are incorporated in a housing7501 as light sources. The lighting device 7500 can be attached to aceiling, a wall, or the like.

The light-emitting device according to one embodiment of the presentinvention includes a light-emitting panel in a thin film form. Thus,when the light-emitting device is attached to a base with a curvedsurface, the light-emitting device with a curved surface can beobtained. In addition, when the light-emitting device is located in ahousing with a curved surface, an electronic device or a lighting devicewith a curved surface can be obtained.

The above-described light-emitting device according to one embodiment ofthe present invention is provided with the light-emitting panelaccording to one embodiment of the present invention in which thethickness A₁ of the portion of the layer containing a light-emittingorganic compound, which overlaps with the side surface of the partition,is smaller than ½ of the thickness A₀ of the portion of the layercontaining a light-emitting organic compound, which is in contact withthe first electrode, and the ratio (B₁/B₀) of the thickness B₁ of theportion of the second electrode, which overlaps with the side surface ofthe partition, to the thickness B₀ of the portion of the secondelectrode, which overlaps with the first electrode, is higher than theratio (A₁/A₀). As a result, a light-emitting device in which theoccurrence of crosstalk is suppressed can be provided.

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Example Structure of Light-Emitting Panel

FIGS. 8A to 8C illustrate a structure of a light-emitting paneldescribed in this example. In a light-emitting panel 290, onelight-emitting element 250 a and the other light-emitting element 250 bare formed over a substrate 200 made of glass with an interlayer film207 provided between the substrate 200 and the one light-emittingelement 250 a and the other light-emitting element 250 b. Further, thepartition 240 is formed between a first electrode 251 a of the onelight-emitting element 250 a and a first electrode 251 b of the otherlight-emitting element 250 b (see FIG. 8A).

An SOI substrate was used as the substrate 200. As the SOI substrate, a50-nm-thick single crystal silicon layer was formed over a 100-nm-thicksilicon oxide film formed over a surface of a 0.7-mm-thick non-alkaliglass substrate. Note that a transistor (not illustrated) was formedusing the single crystal silicon layer over the substrate 200. In thetransistor, a channel formation region included the single crystalsilicon layer, a 40-nm-thick silicon oxynitride film was provided as agate insulating film, and a stack of a 30-nm-thick tantalum nitridelayer and a 370-nm-thick tungsten layer was provided as a gateelectrode. In addition, regions to which impurities were added and whichwere formed in regions between which the channel formation region of thesingle crystal silicon layer was sandwiched were used as a sourceelectrode and a drain electrode. In the transistor, a 50-nm-thicksilicon oxynitride film was provided as a sealing film, and a280-nm-thick silicon nitride oxide film and a 600-nm-thick siliconoxynitride film were provided thereover as an insulating film.

A wiring layer in which a 100-nm-thick titanium layer, a 900-nm-thickaluminum layer, and a 100-nm-thick titanium layer were stacked in thisorder was provided over the insulating film. As the interlayer film 207,a 1.4-μm-thick polyimide film was formed so as to cover the wiring layer(see FIG. 8A).

In the first electrode 251 a of the one light-emitting element 250 a, astack in which a 6-nm-thick titanium film was stacked on a 200-nm-thickaluminum-titanium alloy film was used as a reflective electrode, and a90-nm-thick indium tin oxide film containing silicon oxide(abbreviation: ITSO) was stacked thereon as an optical adjustment layer.

In the first electrode 251 b of the other light-emitting element 250 b,a 6-nm-thick titanium film was stacked on a 200-nm-thickaluminum-titanium alloy film.

The partition 240 included opening portions overlapping with the firstelectrode 251 a and the first electrode 251 b and was formed using a1.4-μm-thick polyimide film which covered an end portion of the firstelectrode 251 a and an end portion of the first electrode 251 b.

<Structure of Layer Containing Light-Emitting Organic Compound>

FIG. 8C illustrates a structure of a layer 253 containing alight-emitting organic compound. The layer 253 containing alight-emitting organic compound had a structure in which two EL layers(a first EL layer 1503 a and a second EL layer 1503 b) were providedwith an intermediate layer (an intermediate layer 1504) interposedtherebetween (the structure is also referred to as tandem structure).

The first EL layer 1503 a included a hole-injection layer 1511, a firsthole-transport layer 1512, a first light-emitting layer 1513, a firstelectron-transport layer 1514 a, and a second electron-transport layer1514 b in this order over the first electrode 251.

The intermediate layer 1504 included an electron-injection buffer 1504a, an electron-relay layer 1504 b, and a charge generation region 1504 cin this order over the electron-transport layer 1514 b.

The second EL layer 1503 b included a second hole-transport layer 1522,a second light-emitting layer 1523 a, a third light-emitting layer 1523b, a third electron-transport layer 1524 a, a fourth electron-transportlayer 1524 b, and an electron-injection layer 1525 in this order overthe intermediate layer 1504.

Table 1 shows details of materials included in the EL layers.

TABLE 1 First EL layer 1503a Electron-transport Hole injectionHole-transport layer layer 1511 layer 1512 First light-emitting layer1513 1514a 1514b PCzPA:MoOx PCzPA CzPA:1,6-mMemFLPAP CzPA Bphen (=2:1)20 nm (=1:0.05) 5 nm 15 nm 20 nm 30 nm Intermediate layer1504Electron-injection buffer layer Electron-relay Charge-generation 1504alayer 1504b region 1504c Ca CuPc PCzPA:MoOx 1 nm 2 nm (=2:1) 20 nmSecond EL layer 1503b Electron-transport layer Hole- Light-emittinglayer Third Fourth transport Second light- Third electron- electron-Electron- layer emitting light-emitting transport transport injection1522 layer 1523a layer 1523b layer 1524a layer 1524b layer 1525 BPAFLP2mDBTPDBqII:PCBA1BP:Ir(mppm)2acac 2mDBTPDBqII:Ir(tppr)2dpm 2mDBTPDBqIIBphen LiF 20 nm 0.8:0.2:0.06 1:0.02 15 nm 15 nm 1 nm 20 nm 20 nm

As a second electrode 252, a conductive film in which a 70-nm-thickindium tin oxide (also referred to as ITO) film was stacked on a15-nm-thick silver-magnesium alloy film was used. The silver-magnesiumalloy film was formed by co-evaporation with the weight ratio of 10:1(=Ag:Mg).

Structural formulas of part of the organic compounds used in thisexample are shown below.

(Manufacture of Light-Emitting Panel)

Next, a method for manufacturing the light-emitting panel 290 will bedescribed.

First, a 100-nm-thick silicon oxide film was formed over a glasssubstrate and a single crystal silicon layer was formed thereover,whereby an SOI substrate was formed. A known method can be employed as amethod for forming a transistor over the SOI substrate provided with thesingle crystal silicon layer.

Next, a reflective film was formed by a sputtering method as theinterlayer film 207. In this example, a stacked film of a 200-nm-thickaluminum-titanium alloy film and a 6-nm-thick titanium film thereon wasused as the reflective film.

Next, an indium tin oxide containing silicon oxide (abbreviation: ITSO)film serving as an optical adjustment layer was formed over the stackedfilm by a sputtering method to have a desired thickness as necessary,and the first electrode 251 a of the one light-emitting element 250 aand the first electrode 251 b of the other light-emitting element 250 bwere formed.

Next, the partition 240 including an opening portion was formed over thefirst electrode of the one light-emitting element 250 a and the firstelectrode of the other light-emitting element 250 b. A positivephotosensitive polyimide was applied, light exposure was performedthrough a photomask, and an unnecessary portion was removed bydevelopment and then baked, so that the partition 240 was formed. Notethat in the baking, a substrate was put in a baking furnace whosetemperature was set at 250° C. in advance, and the substrate after thebaking was taken out without a decrease in the temperature of the bakingfurnace.

Next, the substrate 200 made of glass was fixed to a substrate holderprovided in a vacuum evaporation apparatus such that the surface onwhich the reflective film was formed faced downward, and the pressurewas reduced to approximately 10⁻⁴ Pa.

Next, the hole-injection layer 1511 was formed over the first electrode.As the hole-injection layer 1511, a layer containing a compositematerial of an organic compound and an inorganic compound was formed byco-evaporation of9-phenyl-3-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation:PCzPA) and molybdenum oxide. The thickness of the layer containing acomposite material was nm. The weight ratio of PCzPA to molybdenum oxidewas adjusted to 2:1 (=PCzPA:molybdenum oxide). Note that theco-evaporation method refers to an evaporation method in whichevaporation of a plurality of materials is performed using a pluralityof evaporation sources at the same time in one treatment chamber.

Next, the hole-transport layer 1512 was formed over the hole-injectionlayer 1511. As the hole-transport layer 1512, PCzPA was deposited to athickness of 20 nm by an evaporation method using resistance heating.

Next, the first light-emitting layer 1513 was formed over thehole-transport layer 1512. As the first light-emitting layer 1513,9-[4-(10-phenyl-9-anthryl)phenyl]-9H-carbazole (abbreviation: CzPA) andN,N′-bis(3-methylphenyl)-N,N′-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]-pyrene-1,6-diamine(abbreviation: 1,6mMemFLPAPrn) were co-evaporated to a thickness of 30nm. The evaporation rate was adjusted so that the weight ratio of CzPAto 1,6mMemFLPAPm was 1:0.05 (=CzPA:1,6mMemFLPAPrn).

Next, the electron-transport layer was formed over the firstlight-emitting layer 1513. The electron-transport layer includes thefirst electron-transport layer 1514 a and the second electron-transportlayer 1514 b. Note that CzPA was deposited to a thickness of 5 nm as thefirst electron-transport layer 1514 a, and bathophenanthroline(abbreviation: BPhen) was deposited thereover to a thickness of 15 nm asthe second electron-transport layer 1514 b.

Next, the electron-injection buffer 1504 a was formed over theelectron-transport layer 1514. As the electron-injection buffer 1504 a,calcium was deposited to a thickness of 1 nm.

Next, the electron-relay layer 1504 b was formed over theelectron-injection buffer 1504 a. As the electron-relay layer 1504 b,copper(II) phthalocyanine (abbreviation: CuPc) was deposited to athickness of 2 nm.

Next, the charge generation region 1504 c was formed over theelectron-relay layer 1504 b. As the charge generation region 1504 c, alayer containing a composite material of an organic compound and aninorganic compound was formed by co-evaporation of PCzPA and molybdenumoxide. The thickness of the layer containing a composite material was 30nm. The weight ratio of PCzPA to molybdenum oxide was adjusted to 2:1(=PCzPA:molybdenum oxide).

Next, the hole-transport layer 1522 was formed over the chargegeneration region 1504 c. As the hole-transport layer 1522,4-phenyl-4′-(9-phenylfluoren-9-yl)triphenylamine (abbreviation: BPAFLP)was deposited to a thickness of 20 nm by an evaporation method usingresistance heating.

Next, the second light-emitting layer 1523 a was formed over thehole-transport layer 1522. The second light-emitting layer 1523 a wasformed by co-evaporation of2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[h]quinoxaline (abbreviation:2mDBTPDBq-II), 4-phenyl-4′-(9-phenyl-9H-carbazol-3-yl)triphenylamine(abbreviation: PCBA1BP), and(acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III)(abbreviation: Ir(mppm)₂(acac)) to a thickness of 20 nm. The evaporationrate was adjusted so that the weight ratio of 2mDBTPDBq-II to PCBA1BPand Ir(mppm)₂(acac) was 0.8:0.2:0.06(=2mDBTPDBq-II:PCBA1BP:Ir(mppm)₂(acac)).

Next, the third light-emitting layer 1523 b was formed over the secondlight-emitting layer 1523 a. The third light-emitting layer 1523 b wasformed by co-evaporation of 2mDBTPDBq-II and(dipivaloylmethanato)bis(2,3,5-triphenylpyrazinato)iridium(III)(abbreviation: Ir(tppr)₂(dpm)) to a thickness of 20 nm. The evaporationrate was adjusted so that the weight ratio of 2mDBTPDBq-II toIr(tppr)₂(dpm) was 1:0.02 (=2mDBTPDBq-II:Ir(tppr)₂(dpm)).

Next, the electron-transport layer was formed over the thirdlight-emitting layer 1523 b. The electron-transport layer includes thethird electron-transport layer 1524 a and the fourth electron-transportlayer 1524 b. Note that 2mDBTPDBq-II was formed to a thickness of 15 nmas the third electron-transport layer 1524 a and BPhen was formedthereover to a thickness of 15 nm as the fourth electron-transport layer1524 b.

Next, the electron-injection layer 1525 was formed over the fourthelectron-transport layer 1524 b. As the electron-injection layer 1525,lithium fluoride (LiF) was evaporated to a thickness of 1 nm.

Lastly, the second electrode 252 was formed over the electron-injectionlayer 1525. As the second electrode 252, silver (Ag) and magnesium (Mg)were co-evaporated to a thickness of 10 nm by an evaporation methodusing resistance heating, and then indium tin oxide (abbreviation: ITO)was deposited to a thickness of 70 nm by a sputtering method. Throughthe above steps, the light-emitting panel 290 was manufactured. Theevaporation rate was adjusted so that the volume ratio of Ag to Mg was10:1 (=Ag:Mg).

Sealing was performed in a glove box in a nitrogen atmosphere so thatthe light-emitting panel 290 which was obtained through theabove-described steps was not exposed to the air.

Subsequently, crosstalk to an adjacent light-emitting element when onlya column including the one light-emitting element 250 a is operated inthe light-emitting panel 290 in which the light-emitting elements areprovided in matrix is described. Note that the measurement was carriedout at room temperature (in an atmosphere kept at 25° C.).

<Evaluation Results>

A thickness A₁ of a portion of the layer 253 containing a light-emittingorganic compound, which overlaps with a side surface of the partition240, was smaller than ½ of a thickness A₀ of a portion of the layer 253containing a light-emitting organic compound, which is in contact withthe first electrode 251 a, and the ratio (A₁/A₀) was 42% (see FIG. 8B).

In addition, the ratio (B₁/B₀) of a thickness B₁ of a portion of thesecond electrode 252, which overlaps with the side surface of thepartition 240, to a thickness B₀ of a portion of the second electrode252, which overlaps with the first electrode 251 a, was 58%, which washigher than the ratio (A₁/A₀) that is 42%.

Note that the angle of the side surface of the partition 240 withrespect to the substrate 200 was 56°.

FIG. 9A shows observation results of a light-emitting state of thelight-emitting panel manufactured in this example with an opticalmicroscope and a CCD camera. In the photograph, a portion where bluepixels in one row and blue pixels in one column which are selected inaccordance with an image signal and to which power is supplied by adriver circuit intersect with each other is shown. Note that a red pixelis provided on the left side of the blue pixel, and a green pixel isprovided on the right side of the blue pixel. FIG. 9A shows that a redor green pixel which was adjacent to the selected blue pixel hardlyemitted light, and the occurrence of crosstalk was suppressed.

In FIG. 10, a solid line is obtained by plotting brightness received bya CCD camera in a line A1-B1 in FIG. 9A with respect to their positions.Note that positional information in the horizontal axis is a relativevalue whose unit is a pixel of the CCD camera. In addition, brightnessreceived by the CCD camera is converted into numbers by classifying instages with reference to black as 0 and white as 255.

Brightness observed in relative positions from (100) to (123)corresponds to a blue pixel. Brightness observed from (83) to (93)corresponds to a red pixel, and brightness observed from (123) to (133)corresponds to a green pixel. It can be confirmed from these plots thatthe occurrence of crosstalk is suppressed.

Comparative Example Structure Example of Comparative Panel

A comparative panel described in this reference example has the samestructure as the above-described light-emitting panel except thestructure of a partition. Specifically, the structures of a substrate,an interlayer film, one light-emitting element, and the otherlight-emitting element are the same as those of the substrate, theinterlayer film, the one light-emitting element, and the otherlight-emitting element in the above-light-emitting panel except a modeof a side surface of the partition. Therefore, description of thereference panel can be referred to for the details of portions having astructure similar to that of the above-described light-emitting panel.

The structure of the partition of the comparative panel will bedescribed. The partition includes an opening portion overlapping with afirst electrode of the one light-emitting element and a first electrodeof the other light-emitting element and is formed using a 1.4-μm-thickpolyimide film which covers an end portion of the first electrode of theone light-emitting element and an end portion of the first electrode ofthe other light-emitting element.

A method for manufacturing the partition of the comparative panel isdescribed. Positive photosensitive polyimide was applied, light exposurewas performed through a photomask, and an unnecessary portion wasremoved by development. Next, light exposure was performed without aphotomask and then baking was performed, so that the partition wasformed. By such a method, the angle formed by the side surface of thepartition, which is in contact with the first electrode, and thesubstrate can be a gentle angle. Note that in the baking, the substratewas put in a baking furnace whose temperature was set at 250° C. inadvance, and the substrate after the baking was taken out without adecrease in the temperature of the baking furnace. Specifically, thepartition can be formed so that the side surface thereof is in contactwith the substrate at about 35°.

<Comparison Results>

FIG. 9B shows observation results of a light-emitting state of thecomparative panel manufactured in this comparative example with anoptical microscope and a CCD camera. In the photograph, a portion whereblue pixels in one row and blue pixels in one column which are selectedin accordance with an image signal and to which power is supplied by adriver circuit intersect with each other is shown. Note that a red pixelis provided on the left side of the blue pixel, and a green pixel isprovided on the right side of the blue pixel. From FIG. 9B, a red orgreen pixel which was adjacent to the selected blue pixel emitted light,and the occurrence of crosstalk was observed.

In FIG. 10, a dashed line obtained by plotting brightness received by aCCD camera in a line A2-B2 in FIG. 9B with respect to their positions.Note that positional information in the horizontal axis is a relativevalue whose unit is a pixel of the CCD camera.

Brightness observed in relative positions from (100) to (123)corresponds to a blue pixel. However, brightness observed from (81) to(97) corresponds to a red pixel, and brightness observed from (124) to(134) corresponds to a green pixel. In spite of the fact that the bluepixels are selected, green pixels and red pixels emit light havingunignorable brightness and it can be confirmed that crosstalk occurs.

Reference Example

In this reference example, materials used in Example will be described.

Synthesis Example of 1,6mMemFLPAPrn

A synthesis example ofN′-bis(3-methylphenyl)-N,N′-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]-pyrene-1,6-diamine(abbreviation: 1,6mMemFLPAPrn) is described.

Step 1: Synthesis Method of3-methylphenyl-3-(9-phenyl-9H-fluoren-9-yl)phenylamine (abbreviation:mMemFLPA)

Into a 200 mL three-neck flask were placed 3.2 g (8.1 mmol) of9-(3-bromophenyl)-9-phenylfluorene and 2.3 g (24.1 mmol) of sodiumtert-butoxide. The air in the flask was replaced with nitrogen. To thismixture were added 40.0 mL of toluene, 0.9 mL (8.3 mmol) of m-toluidine,and 0.2 mL of a 10% hexane solution of tri(tert-butyl)phosphine. Thetemperature of this mixture was set to 60° C., and 44.5 mg (0.1 mmol) ofbis(dibenzylideneacetone)palladium(0) was added to the mixture. Thetemperature of this mixture was raised to 80° C., and the mixture wasstirred for 2.0 hours. After that, the mixture was suction-filteredthrough Florisil (produced by Wako Pure Chemical Industries, Ltd.,Catalog No. 540-00135), Celite (produced by Wako Pure ChemicalIndustries, Ltd., Catalog No. 531-16855), and alumina to give afiltrate. A solid obtained by concentration of the obtained filtrate waspurified by silica gel column chromatography (a developing solvent inwhich the ratio of hexane to toluene was 1:1) and recrystallized from amixed solvent of toluene and hexane. Accordingly, 2.8 g of a white solidof the object of the synthesis was obtained in 82% yield. The synthesisscheme of Step 1 above is shown in (J-1) below.

Step 2: Synthesis Method ofN,N′-bis(3-methylphenyl)-N,N′-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]-pyrene-1,6-diamine(abbreviation: 1,6mMemFLPAPrn)

Into a 100 mL three-neck flask were placed 0.6 g (1.7 mmol) of1,6-dibromopyrene, 1.4 g (3.4 mmol) of3-methylphenyl-3-(9-phenyl-9H-fluoren-9-yl)phenylamine, and 0.5 g (5.1mmol) of sodium tert-butoxide. The air in the flask was replaced withnitrogen. To this mixture were added 21.0 mL of toluene and 0.2 mL of a10% hexane solution of tri(tert-butyl)phosphine. The temperature of thismixture was set to 60° C., and 34.9 mg (0.1 mmol) ofbis(dibenzylideneacetone)palladium(0) was added to the mixture. Thetemperature of this mixture was raised to 80° C., and the mixture wasstirred for 3.0 hours. After that, 400 mL of toluene was added to themixture, and the mixture, was heated. While kept hot, the mixture wassuction-filtered through Florisil (produced by Wako Pure ChemicalIndustries, Ltd., Catalog No. 540-00135), Celite (produced by Wako PureChemical Industries, Ltd., Catalog No. 531-16855), and alumina to give afiltrate. The filtrate was concentrated to give a solid, which was thenpurified by silica gel column chromatography (a developing solvent inwhich the ratio of hexane to toluene was 3:2) to give a yellow solid.Recrystallization of the obtained yellow solid from a mixed solvent oftoluene and hexane gave 1.2 g of a yellow solid of the object of thesynthesis in 67% yield.

By a train sublimation method, 1.0 g of the obtained yellow solid waspurified by sublimation. In the sublimation purification, the yellowsolid was heated at 317° C. under a pressure of 2.2 Pa with a flow rateof argon gas of 5.0 mL/min. After the sublimation purification, 1.0 g ofa yellow solid of the object of the synthesis was obtained in a yield of93%. The synthesis scheme of Step 2 above is shown in (J-2) below.

A nuclear magnetic resonance (NMR) method identified this compound asN,N′-bis(3-methylphenyl)-N,N-bis[3-(9-phenyl-9H-fluoren-9-yl)phenyl]-pyrene-1,6-diamine(abbreviation: 1,6mMemFLPAPrn), which was the object of the synthesis.

¹H NMR data of the obtained compound is shown below. ¹H NMR (CDCl₃, 300MHz): δ=2.21 (s, 6H), 6.67 (d, J=7.2 Hz, 2H), 6.74 (d, J=7.2 Hz, 2H),7.17-7.23 (m, 34H), 7.62 (d, J=7.8 Hz, 4H), 7.74 (d, J=7.8 Hz, 2H), 7.86(d, J=9.0 Hz, 2H), 8.04 (d, J=8.7 Hz, 4H).

Synthesis Example of 2mDBTPDBq-II

A synthesis example of2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation:2mDBTPDBq-II) is described.

Synthesis of 2mDBTPDBq-II

A scheme for the synthesis of 2mDBTPDBq-II is illustrated in (C-1).

In a 2 L three-neck flask were put 5.3 g (20 mmol) of2-chlorodibenzo[f,h]quinoxaline, 6.1 g (20 mmol) of3-(dibenzothiophen-4-yl)phenylboronic acid, 460 mg (0.4 mmol) oftetrakis(triphenylphosphine)palladium(0), 300 mL of toluene, 20 mL ofethanol, and 20 mL of a 2M aqueous potassium carbonate solution. Themixture was degassed by being stirred under reduced pressure. The air inthe flask was replaced with nitrogen. This mixture was stirred under anitrogen stream at 100° C. for 7.5 hours. After cooled to roomtemperature, the obtained mixture was filtered to give a whitesubstance. The obtained substance by the filtration was washed withwater and ethanol in this order, and then dried. The obtained solid wasdissolved in about 600 mL of hot toluene, followed by suction filtrationthrough Celite (produced by Wako Pure Chemical Industries, Ltd., CatalogNo. 531-16855) and Florisil (produced by Wako Pure Chemical Industries,Ltd., Catalog No. 540-00135), whereby a clear colorless filtrate wasobtained. The obtained filtrate was concentrated and purified by silicagel column chromatography. The chromatography was carried out using hottoluene as a developing solvent. Acetone and ethanol were added to thesolid obtained here, followed by irradiation with ultrasonic waves.Then, the generated suspended solid was filtered and the obtained solidwas dried to give 7.85 g of a white powder in 80% yield, which was thesubstance to be produced.

The above produced substance was relatively soluble in hot toluene, butis a material that is easy to precipitate when cooled. Further, thesubstance was poorly soluble in other organic solvents such as acetoneand ethanol. Hence, the utilization of these different degrees ofsolubility resulted in a high-yield synthesis by a simple method asabove. Specifically, after the reaction finished, the mixture wasreturned to room temperature and the precipitated solid was collected byfiltration, whereby most impurities were able to be easily removed.Further, by the column chromatography with hot toluene as a developingsolvent, the produced substance, which is easy to precipitate, was ableto be readily purified.

By a train sublimation method, 4.0 g of the obtained white powder waspurified. In the purification, the white powder was heated at 300° C.under a pressure of 5.0 Pa with a flow rate of argon gas of 5 mL/min.After the purification, 3.5 g of a white powder was obtained in a yieldof 88%, which was the substance to be produced.

A nuclear magnetic resonance (NMR) method identified this compound as2-[3-(dibenzothiophen-4-yl)phenyl]dibenzo[f,h]quinoxaline (abbreviation:2mDBTPDBq-II), which was the substance to be produced.

¹H NMR data of the obtained substance are as follows. ¹H NMR (CDCl₃, 300MHz): δ (ppm)=7.45-7.52 (m, 2H), 7.59-7.65 (m, 2H), 7.71-7.91 (m, 7H),8.20-8.25 (m, 2H), 8.41 (d, J=7.8 Hz, 1H), 8.65 (d, J=7.5 Hz, 2H),8.77-8.78 (m, 1H), 9.23 (dd, J=7.2 Hz, 1.5 Hz, 1H), 9.42 (dd, J=7.8 Hz,1.5 Hz, 1H), 9.48 (s, 1H).

Synthesis Example of [Ir(mppm)₂(acac)]

A synthesis example of(acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III)(abbreviation: [Ir(mppm)₂(acac)]) is described.

Step 1: Synthesis of 4-methyl-6-phenylpyrimidine (abbreviation: Hmppm)

First, in a recovery flask equipped with a reflux pipe were put 4.90 gof 4-chloro-6-methylpyrimidine, 4.80 g of phenylboronic acid, 4.03 g ofsodium carbonate, 0.16 g of bis(triphenylphosphine)palladium(II)dichloride (abbreviation: Pd(PPh₃)₂Cl₂), mL of water, and 10 mL ofacetonitrile, and the air in the flask was replaced with argon. Thisreaction container was subjected to irradiation with microwaves (2.45GHz, 100 W) for 60 minutes to be heated. Here, in the flask were furtherput 2.28 g of phenylboronic acid, 2.02 g of sodium carbonate, 0.082 g ofPd(PPh₃)₂Cl₂, 5 mL of water, and 10 mL of acetonitrile, and the mixturewas heated again by irradiation with microwaves (2.45 GHz, 100 W) for 60minutes. After that, water was added to this solution and extractionwith dichloromethane was carried out. The obtained solution of theextract was washed with a saturated sodium carbonate aqueous solution,water, and then with saturated saline, and dried with magnesium sulfate.The solution which had been dried was filtered. The solvent of thissolution was distilled off, and then the obtained residue was purifiedby silica gel column chromatography using dichloromethane and ethylacetate as a developing solvent in a volume ratio of 9:1, so that apyrimidine derivative Hmppm, which was the objective substance, wasobtained (orange oily substance, yield of 46%). Note that theirradiation with microwaves was performed using a microwave synthesissystem (Discover, manufactured by CEM Corporation). A synthesis scheme(b-1) of Step 1 is shown below.

Step 2: Synthesis ofDi-μ-chloro-bis[bis(6-methyl-4-phenylpyrimidinato)iridium(III)](abbreviation: [Ir(mppm)₂Cl]₂)

Next, in a recovery flask equipped with a reflux pipe Were put 15 mL of2-ethoxyethanol, 5 mL of water, 1.51 g of Hmppm obtained in Step 1above, and 1.26 g of iridium chloride hydrate (IrCl₃.H₂O), and the airin the flask was replaced with argon. After that, irradiation withmicrowaves (2.45 GHz, 100 W) was performed for 1 hour to cause areaction. The solvent was distilled off, and then the obtained residuewas washed with ethanol and filtered to give a dinuclear complex[Ir(mppm)₂Cl]₂ (dark green powder, yield of 77%). A synthesis scheme(b-2) of Step 2 is shown below.

Step 3: Synthesis of(acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III)(abbreviation: [Ir(mppm)₂(acac)])

Furthermore, into a recovery flask equipped with a reflux pipe were put40 mL of 2-ethoxyethanol, 1.84 g of the dinuclear complex [Ir(mppm)₂Cl]₂obtained in Step 2, 0.48 g of acetylacetone, and 1.73 g of sodiumcarbonate, and the air in the recovery flask was replaced with argon.Then, irradiation with microwaves (2.45 GHz, 100 W) for 60 minutes wasperformed to cause a reaction. The solvent was distilled off, theobtained residue was dissolved in dichloromethane, and filtration wasperformed to remove insoluble matter. The obtained filtrate was washedwith water and saturated saline, and was dried with magnesium sulfate.The solution which had been dried was filtered. The solvent of thissolution was distilled off, and then the obtained residue was purifiedby silica gel column chromatography using dichloromethane and ethylacetate as a developing solvent in a volume ratio of 4:1. After that,recrystallization was carried out with a mixed solvent ofdichloromethane and hexane to give a yellow powder that was the objectof the synthesis (44% yield). A synthesis scheme (b-3) of Step 3 isshown below.

Analysis results by nuclear magnetic resonance spectrometry (¹H-NMR) ofthe yellow powder obtained in Step 3 are shown below. The result showsthat this compound was(acetylacetonato)bis(6-methyl-4-phenylpyrimidinato)iridium(III)(abbreviation: [Ir(mppm)₂(acac)], which was the objective substance.

¹H NMR. δ (CDCl₃): 1.78 (s, 6H), 2.81 (s, 6H), 5.24 (s, 1H), 6.37 (d,2H), 6.77 (t, 2H), 6.85 (t, 2H), 7.61-7.63 (m, 4H), 8.97 (s, 2H).

This application is based on Japanese Patent Application serial no.2011-141001 filed with Japan Patent Office on Jun. 24, 2011, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A light-emitting panel comprising: at least twofirst electrodes adjacent to each other over a substrate; a partitionformed between the at least two first electrodes and covering partiallytop surfaces of the at least two first electrodes; a layer containing alight-emitting compound over the at least two first electrodes and thepartition; and a second electrode over the layer containing thelight-emitting compound, the second electrode overlapping with the atleast two first electrodes and the partition, wherein the layercontaining the light-emitting compound includes a portion of a thicknessA₀ over one of the at least two first electrodes, and a portion of athickness A₁ over a side surface of the partition, the thickness A₁being smaller than half of the thickness A₀, wherein the secondelectrode includes a portion of a thickness B₀ over one of the at leasttwo first electrodes, and a portion of a thickness B₁ over the sidesurface of the partition, a ratio B₁/B₀ being higher than a ratio A₁/A₀,and wherein a portion of the layer containing the light-emittingcompound overlapping with a top surface of the partition is thicker thanthe portion of the thickness A₁ over the side surface of the partition.2. The light-emitting panel according to claim 1, wherein the sidesurface forms an angle of greater than or equal to 55° and less than orequal to 90° with the substrate.
 3. The light-emitting panel accordingto claim 1, wherein the partition includes a side surface having anangle of greater than or equal to 90° and less than or equal to 100°with respect to the substrate.
 4. The light-emitting panel according toclaim 1, wherein B₁ is greater than B₀.
 5. The light-emitting panelaccording to claim 1, further comprising a spacer formed over thepartition, wherein the spacer is covered with the layer containing thelight-emitting compound and the second electrode.
 6. The light-emittingpanel according to claim 1, wherein the light-emitting compound is anorganic light-emitting compound.
 7. The light-emitting panel accordingto claim 1, wherein the at least two first electrodes are respectivelypart of a first light-emitting element and a second light-emittingelement, each of the first and the second light-emitting elementscomprising the layer containing the light-emitting compound and thesecond electrode.
 8. The light-emitting panel according to claim 1,wherein the layer containing the light-emitting compound includes alight-emitting unit and a charge generation layer, and wherein thecharge generation layer includes a substance having a highhole-transport property and an acceptor substance with respect to thesubstance having a high hole-transport property, and is provided betweenthe light-emitting unit and one of the at least two first electrodes. 9.The light-emitting panel according to claim 1, wherein the layercontaining the light-emitting compound includes a light-emitting unitand an electron-injection buffer, and wherein the electron-injectionbuffer includes a substance having a high electron-transport propertyand a donor substance with respect to the substance having a highelectron-transport property, and is provided between the light-emittingunit and one of the at least two first electrodes.
 10. Thelight-emitting panel according to claim 1, wherein the layer containingthe light-emitting compound includes at least two light-emitting unitsand at least one intermediate layer, and wherein the at least oneintermediate layer is provided with an electron-injection bufferincluding a substance having a high electron-transport property and adonor substance with respect to the substance having a highelectron-transport property, and is provided between the at least twolight-emitting units.
 11. A light-emitting device comprising thelight-emitting panel according to claim
 1. 12. A light-emitting panelcomprising: at least two first electrodes adjacent to each other over asubstrate; an insulating layer formed between the at least two firstelectrodes and covering partially top surfaces of the at least two firstelectrodes; a layer containing a light-emitting compound over the atleast two first electrodes and the insulating layer; and a secondelectrode over the layer containing the light-emitting compound, thesecond electrode overlapping with the at least two first electrodes andthe insulating layer, wherein the layer containing the light-emittingcompound includes a portion of a thickness A₀ over one of the at leasttwo first electrodes, and a portion of a thickness A₁ over a sidesurface of the insulating layer, the thickness A₁ being smaller than thethickness A₀, and wherein the second electrode includes a portion of athickness B₀ over one of the at least two first electrodes, and aportion of a thickness B₁ over the side surface of the insulating layerpartition, a ratio B₁/B₀ being higher than a ratio A₁/A₀, and wherein aportion of the layer containing the light-emitting compound overlappingwith a top surface of the insulating layer is thicker than the portionof the thickness A₁ over the side surface of the insulating layer. 13.The light-emitting panel according to claim 12, wherein the thickness A1is smaller than half of the thickness A₀.
 14. The light-emitting panelaccording to claim 12, wherein the insulating layer comprises apartition and a spacer on top of and in direct contact with thepartition.
 15. The light-emitting panel according to claim 12, whereinthe insulating layer comprises a partition and a spacer on top of and indirect contact with the partition, the spacer comprising a rounded topsurface.
 16. The light-emitting panel according to claim 12, wherein theat least two first electrodes are respectively part of a firstlight-emitting element and a second light-emitting element, each of thefirst and the second light-emitting elements comprising the layercontaining the light-emitting compound and the second electrode.
 17. Alight-emitting device comprising the light-emitting panel according toclaim
 12. 18. A method for manufacturing a light-emitting panelcomprising: forming at least two first electrodes adjacent to each otherover a substrate; forming a partition between the at least two firstelectrodes, the partition covering partially top surfaces of the atleast two first electrodes; forming a layer containing a light-emittingcompound by a first deposition method, the first deposition methodhaving directivity in a direction vertical to the substrate, forming asecond electrode by a second deposition method, wherein the firstdeposition method is such that the layer containing the light-emittingcompound includes a portion of a thickness A₀ over one of the at leasttwo first electrodes, and a portion of a thickness A₁ over a sidesurface of the partition, the thickness A1 being smaller than half ofthe thickness A₀, wherein the first deposition method is such that aportion of the layer containing the light-emitting compound overlappingwith a top surface of the partition is thicker than the portion of thethickness A₁ over the side surface of the partition, and wherein thesecond deposition method is such that the second electrode includes aportion of a thickness B₀ over one of the at least two first electrodes,and a portion of a thickness B₁ over the side surface of the partition,a ratio B₁/B₀ being higher than a ratio A₁/A₀.
 19. The method formanufacturing a light-emitting panel according to claim 18, wherein thefirst deposition method is a resistance heating method and the seconddeposition method is a sputtering method.
 20. The method formanufacturing a light-emitting panel according to claim 18, wherein theside surface forms an angle of greater than or equal to 55° and lessthan or equal to 90° with the substrate.
 21. The method formanufacturing a light-emitting panel according to claim 18, wherein theside surface forms an angle of greater than or equal to 90° and lessthan or equal to 100° with the substrate.